PSMN1R1-30EL,127 NXP Semiconductors, PSMN1R1-30EL,127 Datasheet - Page 11

• Manufacturer Part Number: PSMN1R1-30EL,127
• Description: MOSFET Power N-Ch 30V 1.3 mOhms
• Manufacturer: NXP Semiconductors
• Series: -r

Specifications of PSMN1R1-30EL,127

• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.3 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 120 A
• Power Dissipation: 338 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: I2PAK
• Gate Charge Qg: 243 nC
• Minimum Operating Temperature: - 55 C
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 1.3 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 120A
• Vgs(th) (max) @ Id: 2.2V @ 1mA
• Gate Charge (qg) @ Vgs: 243nC @ 10V
• Input Capacitance (ciss) @ Vds: 14850pF @ 15V
• Power - Max: 338W
• Mounting Type: Through Hole
• Lead Free Status / Rohs Status: Details
• Other names: 934065159127

NXP Semiconductors
8. Revision history
Table 7.
PSMN1R1-30EL
Product data sheet
Document ID
PSMN1R1-30EL v.2
Modifications:
PSMN1R1-30EL v.1
Revision history
20110415
20110203
Release date
•
Status changed from objective to product.
All information provided in this document is subject to legal disclaimers.
Data sheet status
Product data sheet
Objective data sheet
Rev. 2 — 15 April 2011
N-channel 30 V 1.3 mΩ logic level MOSFET in I2PAK
Change notice
-
-
PSMN1R1-30EL
Supersedes
PSMN1R1-30EL v.1
-
© NXP B.V. 2011. All rights reserved.
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