VN3205N6 Supertex, VN3205N6 Datasheet - Page 4
![MOSFET Power 50V 0.3Ohm](/photos/16/9/160904/pdip14_sml.jpg)
VN3205N6
Manufacturer Part Number
VN3205N6
Description
MOSFET Power 50V 0.3Ohm
Manufacturer
Supertex
Datasheet
1.VN3205N6.pdf
(4 pages)
Specifications of VN3205N6
Configuration
Quad
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.3 Ohms
Drain-source Breakdown Voltage
50 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
1.5 A
Power Dissipation
3 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Package / Case
PDIP-14
Minimum Operating Temperature
- 55 C
Lead Free Status / Rohs Status
In Transition
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Typical Performance Curves
©2001 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited.
400
300
200
100
1.1
1.0
0.9
10
0
8
6
4
2
0
-50
0
0
Capacitance vs. Drain-to-Source Voltage
BV
V
DS
DSS
2
Transfer Characteristics
10
0
= 25V
Variation with Temperature
f = 1MHz
V
V
GS
4
DS
T
(volts)
j
50
20
° (
(volts)
C)
C
6
C
RSS
ISS
100
30
8
150
10
40
4
1.0
0.8
0.6
0.4
0.2
1.2
1.1
1.0
0.9
0.8
0.7
10
V
0
8
6
4
2
0
GS(th)
-50
0
0
Gate Drive Dynamic Characteristics
On-Resistance vs. Drain Current
and R
V
215 pF
DS
4
1
= 10V
V
0
1235 Bordeaux Drive, Sunnyvale, CA 94089
GS
Q (nanocoulombs)
TEL: (408) 744-0100 • FAX: (408) 222-4895
DS(ON)
G
I
= 4.5V
D
R
8
(amperes)
2
DS(ON)
Variation with Temperature
T
j
50
(°C)
V
GS(th)
V
@ 10V, 3A
12
GS
3
V
325 pF
= 10V
@ 1mA
DS
100
= 40V
16
4
www.supertex.com
150
20
5
1.6
1.4
1.2
1.0
0.8
0.6
VN3205
11/12/01