VN3205N6 Supertex, VN3205N6 Datasheet - Page 2

• Manufacturer Part Number: VN3205N6
• Description: MOSFET Power 50V 0.3Ohm
• Manufacturer: Supertex

Specifications of VN3205N6

• Configuration: Quad
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.3 Ohms
• Drain-source Breakdown Voltage: 50 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 1.5 A
• Power Dissipation: 3 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Package / Case: PDIP-14
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: In Transition

Thermal Characteristics
*
†
‡
Electrical Characteristics
Notes:
1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
Switching Waveforms and Test Circuit
TO-92
SOT-89
Plastic DIP
I
Mounted on FR5 board, 25mm x 25mm x 1.57mm. Significant P
Total for package.
D
Symbol
BV
V
∆V
I
I
I
R
∆R
G
C
C
C
t
t
t
t
V
t
OUTPUT
(continuous) is limited by max rated T
GSS
DSS
D(ON)
d(ON)
r
d(OFF)
f
rr
Package
GS(th)
DS(ON)
ISS
OSS
RSS
SD
FS
INPUT
GS(th)
DSS
DS(ON)
10V
V
0V
0V
DD
Gate Threshold Voltage
Change in V
Gate Body Leakage
Zero Gate Voltage Drain Current
ON-State Drain Current
Static Drain-to-Source
ON-State Resistance
Change in R
Forward Transconductance
Input Capacitance
Common Source Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Diode Forward Voltage Drop
Reverse Recovery Time
Drain-to-Source Breakdown Voltage
10%
I
D
(continuous)*
1.2A
1.5A
1.5A
t
d(ON)
10%
t
GS(th)
(ON)
DS(ON)
90%
Parameter
j
. T
t
with Temperature
r
with Temperature
A
= 25°C.
TO-92 and P-DIP
SOT-89
TO-92 and P-DIP
SOT-89
I
D
90%
t
(pulsed)
d(OFF)
8.0A
8.0A
8.0A
t
(OFF)
(@ 25°C unless otherwise specified)
D
increase possible on ceramic substrate.
t
90%
F
10%
Power Dissipation
Min
1.6W (T
0.8
3.0
1.0
50
@ T
2
C
3.0W
1.0W
= 25
A
0.85
Typ
-4.3
300
220
1.5
= 25°C)
14
70
20
‡
1
°
C
Max
0.45
0.45
GENERATOR
-5.5
100
300
120
2.4
0.3
0.3
1.2
1.6
10
30
10
15
25
25
PULSE
1
°
41.6
125
C/W
θ
15
R
INPUT
jc
gen
mV/°C
%/°C
Unit
‡
mA
nA
µA
pF
ns
ns
V
V
A
Ω
Ω
Ω
Ω
V
°
C/W
θ
83.3
170
ja
78
V
V
V
V
V
V
T
V
V
V
V
V
V
V
V
f = 1 MHz
V
V
I
R
V
D
A
GS
GS
GS
GS
GS
GS
GS
GS
GS
GS
GS
GS
DS
GS
GS
GS
†
DD
GEN
‡
= 2A
= 125°C
= 25V, I
= 0V, I
= V
= V
= ±20V, V
= 0V, V
= 0V, V
= 10V, V
= 4.5V, I
= 4.5V, I
= 10V, I
= 10V, I
= 10V, I
= 0V, V
= 0V, I
= 0V, I
= 25V
= 10Ω
DS
DS
Conditions
, I
, I
D
SD
SD
1.2A
1.5A
1.5A
I
D
D
DS
DS
DS
D
D
D
D
DR
= 10mA
D
D
DS
= 10mA
= 10mA
= 2A
= 1.5A
= 1A
= 3A
= 1.5A
= 3A
DS
*
= 1.5A
= 0.75A
= Max Rating
= 0.8 Max Rating
= 25V
= 5V
V
DD
= 0V
R
L
D.U.T.
OUTPUT
8.0A
8.0A
8.0A
I
DRM
VN3205