PSMN1R2-30YLC,115 NXP Semiconductors, PSMN1R2-30YLC,115 Datasheet - Page 9

• Manufacturer Part Number: PSMN1R2-30YLC,115
• Description: MOSFET Power N-Ch 30V 1.25mOhms
• Manufacturer: NXP Semiconductors
• Series: -r

Specifications of PSMN1R2-30YLC,115

• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.25 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 100 A
• Power Dissipation: 215 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: LFPAK
• Gate Charge Qg: 78 nC
• Minimum Operating Temperature: - 55 C
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 1.25 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 100A
• Vgs(th) (max) @ Id: 1.95V @ 1mA
• Gate Charge (qg) @ Vgs: 78nC @ 10V
• Input Capacitance (ciss) @ Vds: 5093pF @ 15V
• Power - Max: 215W
• Mounting Type: Surface Mount
• Lead Free Status / Rohs Status: Details
• Other names: 934065187115

NXP Semiconductors
PSMN1R2-30YLC
Product data sheet
Fig 12. Drain-source on-state resistance as a function
Fig 14. Gate charge waveform definitions
R
(mΩ)
DS on
6
5
4
3
2
1
0
of drain current; typical values
0
V
V
V
V
GS(pl)
DS
GS(th)
GS
Q
25
GS1
I
Q
D
GS
Q
GS2
50
Q
G(tot)
Q
GD
2.6
75
N-channel 30 V 1.25mΩ logic level MOSFET in LFPAK using NextPower
V
GS
4.5
All information provided in this document is subject to legal disclaimers.
003a a f 558
003aaa508
I
(V) = 2.8
D
(A)
3.0
3.5
10
100
Rev. 1 — 3 May 2011
Fig 13. Normalized drain-source on-state resistance
Fig 15. Gate-source voltage as a function of gate
V
(V)
a
GS
1.5
0.5
10
2
1
0
8
6
4
2
0
-60
factor as a function of junction temperature
charge; typical values
0
25
0
PSMN1R2-30YLC
V
GS
6V
60
50
= 4.5V
V
DS
= 15V
24V
120
75
© NXP B.V. 2011. All rights reserved.
10V
003a a f 559
003a a f 565
Q
Tj ( C)
G
(nC)
180
100
9 of 15