PSMN1R2-30YLC,115 NXP Semiconductors, PSMN1R2-30YLC,115 Datasheet - Page 4

• Manufacturer Part Number: PSMN1R2-30YLC,115
• Description: MOSFET Power N-Ch 30V 1.25mOhms
• Manufacturer: NXP Semiconductors
• Series: -r

Specifications of PSMN1R2-30YLC,115

• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.25 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 100 A
• Power Dissipation: 215 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: LFPAK
• Gate Charge Qg: 78 nC
• Minimum Operating Temperature: - 55 C
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 1.25 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 100A
• Vgs(th) (max) @ Id: 1.95V @ 1mA
• Gate Charge (qg) @ Vgs: 78nC @ 10V
• Input Capacitance (ciss) @ Vds: 5093pF @ 15V
• Power - Max: 215W
• Mounting Type: Surface Mount
• Lead Free Status / Rohs Status: Details
• Other names: 934065187115

NXP Semiconductors
PSMN1R2-30YLC
Product data sheet
Fig 1.
Fig 3.
(A)
I
D
360
300
240
180
120
60
0
mounting base temperature
Continuous drain current as a function of
Single pulse avalanche rating; avalanche current as a function of avalanche time
0
50
(1)
100
(A)
I
10
10
AL
10
10
150
-1
3
2
1
N-channel 30 V 1.25mΩ logic level MOSFET in LFPAK using NextPower
10
All information provided in this document is subject to legal disclaimers.
-3
T
003a a f 553
mb
( C)
200
10
-2
Rev. 1 — 3 May 2011
10
-1
(1)
(2)
Fig 2.
P
(%)
der
120
80
40
0
1
function of mounting base temperature
Normalized total power dissipation as a
0
t
003a a f 567
AL
(ms )
10
50
PSMN1R2-30YLC
100
150
© NXP B.V. 2011. All rights reserved.
T
mb
03na19
(°C)
200
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