PSMN1R2-30YLC,115 NXP Semiconductors, PSMN1R2-30YLC,115 Datasheet - Page 5

• Manufacturer Part Number: PSMN1R2-30YLC,115
• Description: MOSFET Power N-Ch 30V 1.25mOhms
• Manufacturer: NXP Semiconductors
• Series: -r

Specifications of PSMN1R2-30YLC,115

• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.25 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 100 A
• Power Dissipation: 215 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: LFPAK
• Gate Charge Qg: 78 nC
• Minimum Operating Temperature: - 55 C
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 1.25 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 100A
• Vgs(th) (max) @ Id: 1.95V @ 1mA
• Gate Charge (qg) @ Vgs: 78nC @ 10V
• Input Capacitance (ciss) @ Vds: 5093pF @ 15V
• Power - Max: 215W
• Mounting Type: Surface Mount
• Lead Free Status / Rohs Status: Details
• Other names: 934065187115

NXP Semiconductors
6. Thermal characteristics
Table 6.
PSMN1R2-30YLC
Product data sheet
Symbol
R
Fig 4.
Fig 5.
th(j-mb)
Z
(K/W)
th(j-mb)
(A)
I
D
10
10
10
10
10
10
10
10
-1
-2
-3
-1
1
4
3
2
1
10
1e-6
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
Transient thermal impedance from junction to mounting base as a function of pulse duration
-1
δ = 0.5
0.2
0.05
0.02
0.1
Thermal characteristics
Parameter
thermal resistance from
junction to mounting base
single shot
10
-5
Limit R
DSon
= V
N-channel 30 V 1.25mΩ logic level MOSFET in LFPAK using NextPower
DS
All information provided in this document is subject to legal disclaimers.
10
/ I
1
D
-4
Conditions
see
Rev. 1 — 3 May 2011
Figure 5
10
-3
DC
10
10
-2
PSMN1R2-30YLC
Min
-
V
DS
P
10
(V)
-1
t
100 μ s
1 ms
10 ms
100 ms
p
=10 μ s
t
p
Typ
0.58
T
© NXP B.V. 2011. All rights reserved.
t
δ =
p
003aaf554
003aaf555
(s)
Max
0.7
t
T
p
t
10
1
2
Unit
K/W
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