MT46H8M16LFBF-6:K Micron Technology Inc, MT46H8M16LFBF-6:K Datasheet - Page 68

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MT46H8M16LFBF-6:K

Manufacturer Part Number
MT46H8M16LFBF-6:K
Description
IC SDRAM 128MB 166MHZ 60VFBGA
Manufacturer
Micron Technology Inc
Type
DDR SDRAMr
Series
-r
Datasheet

Specifications of MT46H8M16LFBF-6:K

Organization
8Mx16
Density
128Mb
Address Bus
15b
Access Time (max)
6.5/5ns
Maximum Clock Rate
166MHz
Operating Supply Voltage (typ)
1.8V
Package Type
VFBGA
Operating Temp Range
0C to 70C
Operating Supply Voltage (max)
1.95V
Operating Supply Voltage (min)
1.7V
Supply Current
80mA
Pin Count
60
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Format - Memory
RAM
Memory Type
Mobile DDR SDRAM
Memory Size
128M (8Mx16)
Speed
166MHz
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.95 V
Operating Temperature
0°C ~ 70°C
Package / Case
60-VFBGA
Lead Free Status / Rohs Status
Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MT46H8M16LFBF-6:K
Manufacturer:
Micron Technology Inc
Quantity:
10 000
Figure 31: Data Output Timing –
PDF: 09005aef8331b3e9
128mb_mobile_ddr_sdram_t35m.pdf - Rev. F 03/10 EN
All DQ values, collectively
Command
DQS or LDQS/UDQS
CK#
CK
READ
T0
Notes:
3
2
1. Commands other than NOP can be valid during this cycle.
2. DQ transitioning after DQS transitions define
3. All DQ must transition by
4.
NOP
T1
t
AC is the DQ output window relative to CK and is the long-term component of DQ skew.
CL = 3
1
t
LZ
t
AC and
NOP
T2
t
t
RPRE
DQSCK
t
1
t
DQSCK
LZ
t
AC
T2n
4
T2
t
68
DQSQ after DQS transitions, regardless of
NOP
T3
128Mb: x16, x32 Mobile LPDDR SDRAM
1
T2n
T3n
Micron Technology, Inc. reserves the right to change products or specifications without notice.
t
DQSCK
t
AC
T3
NOP
4
T4
t
1
DQSQ window.
T3n
T4n
T4
NOP
T5
1
© 2007 Micron Technology, Inc. All rights reserved.
T4n
T5n
READ Operation
t
AC.
T5
NOP
T6
1
Don’t Care
T5n
t
t
t
HZ
HZ
RPST

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