MT46H8M16LFBF-6:K Micron Technology Inc, MT46H8M16LFBF-6:K Datasheet - Page 24

• Manufacturer Part Number: MT46H8M16LFBF-6:K
• Description: IC SDRAM 128MB 166MHZ 60VFBGA
• Manufacturer: Micron Technology Inc
• Type: DDR SDRAMr
• Series: -r

Specifications of MT46H8M16LFBF-6:K

• Organization: 8Mx16
• Density: 128Mb
• Address Bus: 15b
• Access Time (max): 6.5/5ns
• Maximum Clock Rate: 166MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: VFBGA
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 1.95V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 80mA
• Pin Count: 60
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Format - Memory: RAM
• Memory Type: Mobile DDR SDRAM
• Memory Size: 128M (8Mx16)
• Speed: 166MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 60-VFBGA
• Lead Free Status / Rohs Status: Compliant

Electrical Specifications – AC Operating Conditions
Table 10: Electrical Characteristics and Recommended AC Operating Conditions
Notes 1–9 apply to all the parameters in this table; V
PDF: 09005aef8331b3e9
128mb_mobile_ddr_sdram_t35m.pdf - Rev. F 03/10 EN
Parameter
Access window of
DQ from CK/CK#
Clock cycle time
CK high-level width
CK low-level width
CKE minimum pulse width
(high and low)
Auto precharge write re-
covery + precharge time
DQ and DM input hold
time relative to DQS (fast
slew rate)
DQ and DM input hold
time relative to DQS (slow
slew rate)
DQ and DM input setup
time relative to DQS (fast
slew rate)
DQ and DM input setup
time relative to DQS (slow
slew rate)
DQ and DM input pulse
width (for each input)
Access window of
DQS from CK/CK#
DQS input high pulse
width
DQS input low pulse width
DQS–DQ skew, DQS to last
DQ valid, per group, per
access
WRITE command to first
DQS latching transition
DQS falling edge from CK
rising – hold time
DQS falling edge to CK
rising – setup time
CL = 3
CL = 2
CL = 3
CL = 2
CL = 3
CL = 2
Symbol
t
t
t
DQSCK
t
t
t
DQSH
DQSQ
DIPW
t
t
DQSL
DQSS
t
t
t
t
t
t
t
t
DAL
DSH
t
CKE
t
DH
DH
DSS
DS
DS
AC
CK
CH
CL
f
s
f
s
Min
0.45
0.45
0.48
0.58
0.48
0.58
0.75
2.0
2.0
5.0
1.8
2.0
2.0
0.4
0.4
0.2
0.2
12
1
–
–
-5
Electrical Specifications – AC Operating Conditions
Max
0.55
0.55
1.25
5.0
6.5
5.0
6.5
0.6
0.6
0.4
–
–
–
–
–
–
–
–
–
–
–
DD
/V
DDQ
Min
0.45
0.45
0.54
0.64
0.54
0.64
0.75
2.0
2.0
5.4
1.9
2.0
2.0
0.4
0.4
0.2
0.2
12
1
–
–
24
= 1.70–1.95V
-54
128Mb: x16, x32 Mobile LPDDR SDRAM
Max
0.55
0.55
0.45
1.25
5.0
6.5
5.0
6.5
0.6
0.6
–
–
–
–
–
–
–
–
–
–
–
Micron Technology, Inc. reserves the right to change products or specifications without notice.
Min
0.45
0.45
0.75
2.0
2.0
0.6
0.7
0.6
0.7
2.1
2.0
2.0
0.4
0.4
0.2
0.2
12
6
1
–
–
-6
Max
0.55
0.55
1.25
5.0
6.5
5.0
6.5
0.6
0.6
0.5
–
–
–
–
–
–
–
–
–
–
–
Min
0.45
0.45
0.75
2.0
2.0
7.5
0.8
0.9
0.8
0.9
1.8
2.0
2.0
0.4
0.4
0.2
0.2
12
1
–
–
© 2007 Micron Technology, Inc. All rights reserved.
-75
Max
0.55
0.55
1.25
6.0
6.5
6.0
6.5
0.6
0.6
0.6
–
–
–
–
–
–
–
–
–
–
–
Unit
t
t
t
t
t
t
t
t
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
CK
CK
CK
CK
CK
CK
CK
CK
–
Notes
13, 14,
13, 14,
13, 17
10
11
12
15
15
16