MT46H8M16LFBF-6:K Micron Technology Inc, MT46H8M16LFBF-6:K Datasheet - Page 35

• Manufacturer Part Number: MT46H8M16LFBF-6:K
• Description: IC SDRAM 128MB 166MHZ 60VFBGA
• Manufacturer: Micron Technology Inc
• Type: DDR SDRAMr
• Series: -r

Specifications of MT46H8M16LFBF-6:K

• Organization: 8Mx16
• Density: 128Mb
• Address Bus: 15b
• Access Time (max): 6.5/5ns
• Maximum Clock Rate: 166MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: VFBGA
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 1.95V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 80mA
• Pin Count: 60
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Format - Memory: RAM
• Memory Type: Mobile DDR SDRAM
• Memory Size: 128M (8Mx16)
• Speed: 166MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 60-VFBGA
• Lead Free Status / Rohs Status: Compliant

Figure 9: ACTIVE Command
READ
PDF: 09005aef8331b3e9
128mb_mobile_ddr_sdram_t35m.pdf - Rev. F 03/10 EN
BA0, BA1
The READ command is used to initiate a burst read access to an active row. The values
on the BA0 and BA1 inputs select the bank; the address provided on inputs A[I:0] (where
I = the most significant column address bit for each configuration) selects the starting
column location. The value on input A10 determines whether auto precharge is used. If
auto precharge is selected, the row being accessed will be precharged at the end of the
READ burst; if auto precharge is not selected, the row will remain open for subsequent
accesses.
Address
RAS#
CAS#
WE#
CK#
CKE
CS#
CK
HIGH
Bank
Row
Don’t Care
35
128Mb: x16, x32 Mobile LPDDR SDRAM
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2007 Micron Technology, Inc. All rights reserved.
Commands