STM32F101RDT6TR STMicroelectronics, STM32F101RDT6TR Datasheet - Page 75
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STM32F101RDT6TR
Manufacturer Part Number
STM32F101RDT6TR
Description
16/32-BITS MICROS
Manufacturer
STMicroelectronics
Series
STM32r
Datasheet
1.STM32F101RET6.pdf
(106 pages)
Specifications of STM32F101RDT6TR
Core Processor
ARM® Cortex-M3™
Core Size
32-Bit
Speed
36MHz
Connectivity
I²C, IrDA, LIN, SPI, UART/USART
Peripherals
DMA, PDR, POR, PVD, PWM, Temp Sensor, WDT
Number Of I /o
51
Program Memory Size
384KB (384K x 8)
Program Memory Type
FLASH
Eeprom Size
-
Ram Size
48K x 8
Voltage - Supply (vcc/vdd)
2 V ~ 3.6 V
Data Converters
A/D 16x12b, D/A 2x12b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
64-LQFP
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
STM32F101RDT6TR
Manufacturer:
STMicroelectronics
Quantity:
10 000
STM32F101xC, STM32F101xD, STM32F101xE
5.3.11
EMC characteristics
Susceptibility tests are performed on a sample basis during device characterization.
Functional EMS (Electromagnetic susceptibility)
While a simple application is executed on the device (toggling 2 LEDs through I/O ports). the
device is stressed by two electromagnetic events until a failure occurs. The failure is
indicated by the LEDs:
●
●
A device reset allows normal operations to be resumed.
The test results are given in
defined in application note AN1709.
Table 41.
Designing hardened software to avoid noise problems
EMC characterization and optimization are performed at component level with a typical
application environment and simplified MCU software. It should be noted that good EMC
performance is highly dependent on the user application and the software in particular.
Therefore it is recommended that the user applies EMC software optimization and pre
qualification tests in relation with the EMC level requested for his application.
Software recommendations
The software flowchart must include the management of runaway conditions such as:
●
●
●
Prequalification trials
Most of the common failures (unexpected reset and program counter corruption) can be
reproduced by manually forcing a low state on the NRST pin or the Oscillator pins for 1
second. To complete these trials, ESD stress can be applied directly on the device, over the
range of specification values. When unexpected behavior is detected, the software can be
hardened to prevent unrecoverable errors occurring (see application note AN1015).
V
V
Symbol
FESD
EFTB
Electrostatic discharge (ESD) (positive and negative) is applied to all device pins until
a functional disturbance occurs. This test is compliant with the IEC 61000-4-2 standard.
FTB: A Burst of Fast Transient voltage (positive and negative) is applied to V
V
compliant with the IEC 61000-4-4 standard.
Corrupted program counter
Unexpected reset
Critical Data corruption (control registers...)
SS
through a 100 pF capacitor, until a functional disturbance occurs. This test is
Voltage limits to be applied on any I/O pin to
induce a functional disturbance
Fast transient voltage burst limits to be
applied through 100 pF on V
pins to induce a functional disturbance
EMS characteristics
Parameter
Table
Doc ID 14610 Rev 7
41. They are based on the EMS levels and classes
DD
and V
SS
V
T
conforms to IEC 61000-4-2
V
T
conforms to IEC 61000-4-4
A
A
DD
DD
+25 °C, f
+25 °C, f
3.3 V, LQFP144,
3.3 V, LQFP144,
Conditions
HCLK
HCLK
Electrical characteristics
36 MHz
36 MHz
Level/Class
DD
2B
4A
and
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