STM32F101RDT6TR STMicroelectronics, STM32F101RDT6TR Datasheet - Page 105
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STM32F101RDT6TR
Manufacturer Part Number
STM32F101RDT6TR
Description
16/32-BITS MICROS
Manufacturer
STMicroelectronics
Series
STM32r
Datasheet
1.STM32F101RET6.pdf
(106 pages)
Specifications of STM32F101RDT6TR
Core Processor
ARM® Cortex-M3™
Core Size
32-Bit
Speed
36MHz
Connectivity
I²C, IrDA, LIN, SPI, UART/USART
Peripherals
DMA, PDR, POR, PVD, PWM, Temp Sensor, WDT
Number Of I /o
51
Program Memory Size
384KB (384K x 8)
Program Memory Type
FLASH
Eeprom Size
-
Ram Size
48K x 8
Voltage - Supply (vcc/vdd)
2 V ~ 3.6 V
Data Converters
A/D 16x12b, D/A 2x12b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
64-LQFP
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
STM32F101RDT6TR
Manufacturer:
STMicroelectronics
Quantity:
10 000
STM32F101xC, STM32F101xD, STM32F101xE
Table 65.
24-Sep-2009
21-Jul-2009
Date
Document revision history (continued)
Revision
6
7
Figure 1: STM32F101xC, STM32F101xD and STM32F101xE access
line block diagram
Note 5
STM32F101xx pin
V
voltage.
f
characteristics.
Table 23: HSE 4-16 MHz oscillator characteristics
modified below
Figure 40: Recommended NRST pin protection
replaced by C in
Table 24: LSE oscillator characteristics (fLSE = 32.768
modified and moved below the tables.
Table 25: HSI oscillator characteristics
from
Jitter added to
In
timings: t
In
timings: t
In
t
In
t
In
t
In
cycles: t
Table 52: SPI characteristics
C
R
Table 57: DAC characteristics
buffered DAC
Number of DACs corrected in
I
consumptions in Stop and Standby
Figure 13: Typical current consumption on VBAT with RTC on vs.
temperature at different VBAT values
IEC 1000 standard updated to IEC 61000 and SAE J1752/3 updated to
IEC 61967-2 in
Table 57: DAC characteristics
Small text changes.
HSE_ext
h(AD_NADV)
h(A_NWE)
h(CLKH-NWAITV)
DD_VBAT
RERINT
ADC
AIN
Table 31: Asynchronous non-multiplexed SRAM/PSRAM/NOR read
Table 32: Asynchronous non-multiplexed SRAM/PSRAM/NOR write
Table 33: Asynchronous multiplexed NOR/PSRAM read
Table 34: Asynchronous multiplexed NOR/PSRAM write
Table 35: Synchronous multiplexed NOR/PSRAM read
Table 40: Switching characteristics for NAND Flash read and write
Doc ID 14610 Rev 7
Table 27: Low-power mode wakeup
max values modified in
and R
updated and
h(NOE-D)
min modified in
and T
h(BL_NOE)
h(A_NWE)
updated in
modified.
and t
AIN
added.
Coeff
Table 28: PLL
Figure 19: Typical application with an 8 MHz
Section 5.3.11: EMC characteristics on page
modified.
parameters modified in
Table 23: HSE 4-16 MHz oscillator characteristics
h(A_NOE)
modified.
and t
modified.
definitions.
and t
added to
Note 4
Table 17: Typical and maximum current
h(Data_NWE)
h(A_NOE)
Table 21: High-speed external user clock
modified.
added in
Table 54: RAIN max for fADC = 14
Table 13: Embedded internal reference
modified.
characteristics.
Table 3: STM32F101xx
modified.
modified.
Changes
modified.
modified.
modes.
Table 5: High-density
added.
modified. Conditions removed
Table 53: ADC
Figure 49: 12-bit buffered /non-
timings.
modified. C
modified.
Revision history
family.
characteristics.
kHz), notes
timings:
timings:
timings:
L1
Note 1
crystal.
75.
and C
MHz.
105/106
and
L2