DP8522AV-25 National Semiconductor, DP8522AV-25 Datasheet - Page 13

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DP8522AV-25

Manufacturer Part Number
DP8522AV-25
Description
IC CTRLR 4M VRAM 25MHZ 68PLCC
Manufacturer
National Semiconductor
Datasheet

Specifications of DP8522AV-25

Controller Type
Video RAM Controller, Drivers
Operating Temperature
0°C ~ 70°C
Mounting Type
Surface Mount
Package / Case
68-LCC (J-Lead)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Current - Supply
-
Voltage - Supply
-
Interface
-
Other names
*DP8522AV-25
4 0 Refresh Options
The DP8520A 21A 22A support a wide variety of refresh
control mode options including automatic internally con-
trolled refresh externally controlled burst refresh refresh
request acknowledge and any combination of the above
With each of the control modes above different types of
refreshes can be performed These different types include
all RAS refresh staggered refresh and error scrubbing dur-
ing all RAS refresh
There are three inputs EXTNDRF RFSH and DISRFSH
and one output RFIP (RFRQ) associated with refresh
There are also ten programming bits R0–1 R9 C0 – 6 and
ECAS0 used to program the various types of refreshing
The two inputs RFSH and DISRFSH are used in the exter-
nally controlled burst refresh mode and the refresh re-
quest acknowledge mode The output RFRQ is used in the
refresh request acknowledge mode The input EXTNDRF is
used in all refresh modes and the output RFIP is used in all
refresh modes except the refresh request acknowledge
mode Asserting the input EXTNDRF extends the refresh
cycle single or multiple integral clock periods of CLK The
output RFIP is asserted one period of CLK before the first
refresh RAS is asserted If an access is currently in prog-
ress RFIP will be asserted up to one period of CLK before
the first refresh RAS once AREQ or AREQB is negated for
the access (see Figure 7a )
The DP8520A 21A 22A will increment the refresh address
counter automatically independent of the refresh mode
used The refresh address counter will be incremented once
all the refresh RASs have been negated
In every combination of refresh control mode and refresh
type the DP8520A 21A 22A is programmed to keep RAS
asserted a number of CLK periods The values of RAS low
time during refresh are programmed with the programming
bits R0 and R1
4 1 REFRESH CONTROL MODES
There are three different modes of refresh control Any of
these modes can be used in combination or singularly to
produce the desired refresh results The three different
modes of control are automatic internal refresh external
burst refresh and refresh request acknowledge
4 1 1 Automatic Internal Refresh
The DP8520A 21A 22A have an internal refresh clock The
period of the refresh clock is generated from the program-
ming bits C0–3 Every period of the refresh clock an inter-
nal refresh request is generated As long as a VRAM access
is not currently in progress and precharge time has been
met the internal refresh request will generate an automatic
internal refresh If a VRAM access is in progress the
DP8520A 21A 22A on-chip arbitration logic will wait until
the access is finished before performing the refresh The
refresh access arbitration logic can insert a refresh cycle
between two address pipelined accesses However the re-
fresh arbitration logic can not interrupt an access cycle to
perform a refresh To enable automatic internally controlled
refreshes the input DISRFSH must be negated
4 1 2 Externally Controlled Burst Refresh
To use externally controlled burst refresh the user must
disable the automatic internally controlled refreshes by as-
serting the input DISRFSH The user is responsible for gen-
erating the refresh request by asserting the input RFSH
13
Figure 7b If an access to VRAM is in progress or precharge
Pulsing RFSH low sets an internal latch that is used to
produce the internal refresh request The refresh cycle will
take place on the next positive edge of CLK as shown in
time for the last access has not been met the refresh will be
delayed Since pulsing RFSH low sets a latch the user does
not have to keep RFSH low until the refresh starts When
the last refresh RAS negates the internal refresh request
latch is cleared
By keeping RFSH asserted past the positive edge of CLK
which ends the refresh cycle as shown in Figure 8 the user
will perform another refresh cycle Using this technique the
user can perform a burst refresh consisting of any number
of refresh cycles Each refresh cycle during a burst refresh
will meet the refresh RAS low time and the RAS precharge
time (programming bits R0– 1)
If the user desires to burst refresh the entire VRAM (all row
addresses) he could generate an end of count signal (burst
refresh finished) by looking at one of the DP8520A 21A
22A high address outputs (Q7 Q8 Q9 or Q10) and the RFIP
output The Qn outputs function as a decode of how many
row addresses have been refreshed (Q7
Q8
refreshes)
4 1 3 Refresh Request Acknowledge
The DP8520A 21A 22A can be programmed to output in-
ternal refresh requests When the user programs ECAS0
negated during programming the RFIP output functions as
RFRQ RFRQ will be asserted from a positive edge of CLK
as shown in Figure 9a Once RFRQ is asserted it will stay
asserted until the RFSH is pulsed low with DISRFSH assert-
ed This will cause an externally requested burst refresh to
take place If DISRFSH is negated an automatic internal
refresh will take place as shown in Figure 9b
RFRQ will go high and then assert if additional periods of
the internal refresh clock have expired and neither an exter-
nally controlled refresh nor an automatically controlled inter-
nal refresh have taken place as shown in Figure 9c If a time
critical event or long access like page static column mode
access can not be interrupted RFRQ pulsing high can be
used to increment a counter The counter can be used to
perform a burst refresh of the number of refreshes missed
(through the RFSH input)
4 2 REFRESH CYCLE TYPES
Three different types of refresh cycles are available for use
The three different types are mutually exclusive and can be
used with any of the three modes of refresh control The
three different refresh cycle types are all RAS refresh stag-
gered RAS refresh and error scrubbing during all RAS re-
fresh In all refresh cycle types the RAS precharge time is
guaranteed between the previous access RAS ending and
the refresh RAS0 starting between refresh RAS3 ending
and access RAS beginning between burst refresh RASs
4 2 1 Conventional RAS Refresh
A conventional refresh cycle causes RAS0– 3 to all assert
from the first positive edge of CLK after RFIP is asserted as
shown in Figure 10 RAS0– 3 will stay asserted until the
number of positive edges of CLK programmed have passed
On the last positive edge RAS0– 3 and RFIP will be negat-
ed This type of refresh cycle is programmed by negating
address bit R9 during programming
e
256 refreshes Q9
e
512 refreshes Q10
e
128 refreshes
e
1024

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