MAX5886EGK+D Maxim Integrated Products, MAX5886EGK+D Datasheet - Page 12

• Manufacturer Part Number: MAX5886EGK+D
• Description: IC DAC 12BIT 3.3V 500MSPS 68-QFN
• Manufacturer: Maxim Integrated Products

Specifications of MAX5886EGK+D

• Settling Time: 11ns
• Number Of Bits: 12
• Data Interface: Parallel
• Number Of Converters: 1
• Voltage Supply Source: Analog and Digital
• Power Dissipation (max): 130mW
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 68-QFN Exposed Pad
• Number Of Dac Outputs: 1
• Conversion Rate: 500 MSPs
• Resolution: 12 bit
• Interface Type: Serial
• Supply Voltage (max): 3.465 V
• Supply Voltage (min): 3.135 V
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• Maximum Power Dissipation: 3333 mW
• Minimum Operating Temperature: - 40 C
• Supply Current: 6.4 mA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

If a single-ended unipolar output is desirable, IOUTP
should be selected as the output, with IOUTN ground-
ed. However, driving the MAX5886 single ended is not
recommended since additional noise is added (from
the ground plane) in such configurations.
The distortion performance of the DAC depends on the
load impedance. The MAX5886 is optimized for a 50Ω
double termination. It can be used with a transformer
output as shown in Figure 7 or just one 50Ω resistor
from each output to ground and one 50Ω resistor
between the outputs. This produces a full-scale output
power of up to 0dBm depending on the output current
setting. Higher termination impedance can be used at
the cost of degraded distortion performance and
increased output noise voltage.
3.3V, 12-Bit, 500Msps High Dynamic
Performance DAC with Differential LVDS Inputs
Figure 7. Differential to Single-Ended Conversion Using a Wideband RF Transformer
Figure 8. MAX5886 Differential Output Configuration
12
12
B0–B11
______________________________________________________________________________________
AGND
AV
DD
12
MAX5886
B0–B11
DGND
DV
DD
CLKGND
VCLK
AGND
AV
DD
MAX5886
DGND
DV
IOUTN
IOUTP
DD
CLKGND
VCLK
50Ω
100Ω
50Ω
IOUTN
IOUTP
OUTP
OUTN
50Ω
100Ω
50Ω
The transmitter sections of BTS applications serving
CDMA and W-CDMA architectures must generate carri-
ers with minimal coupling of carrier energy into the
adjacent channels. Similar to the GSM/EDGE model
(see the Multitone Testing for GSM/EDGE Applications
section), a transmit mask (Tx mask) exists for this appli-
cation. The spread-spectrum modulation function
applied to the carrier frequency generates a spectral
response, which is uniform over a given bandwidth (up
to 4MHz) for a W-CDMA-modulated carrier.
A dominant specification is ACLR, a parameter which
reflects the ratio of the power in the desired carrier
band to the power in an adjacent carrier band. The
specification covers the first two adjacent bands, and is
measured on both sides of the desired carrier.
According to the transmit mask for CDMA and W-CDMA
architectures, the power ratio of the integrated carrier
channel energy to the integrated adjacent channel
energy must be >45dB for the first adjacent carrier slot
(ACLR 1) and >50dB for the second adjacent carrier
slot (ACLR 2). This specification applies to the output of
the entire transmitter signal chain. The requirement for
only the DAC block of the transmitter must be tighter,
with a typical margin of >15dB, requiring the DAC’s
ACLR 1 to be better than 60dB. Adjacent channel leak-
age is caused by a single spread-spectrum carrier,
which generates intermodulation (IM) products
T1, 1:1
Adjacent Channel Leakage Power Ratio
T2, 1:1
PERFORMS THE DIFFERENTIAL TO
WIDEBAND RF TRANSFORMER T2
SINGLE-ENDED CONVERSION.
(ACLR) Testing for CDMA- and
W-CDMA-Based Base Station
V
OUT
Transceiver Systems (BTS)
, SINGLE ENDED