ADF4112BRUZ Analog Devices Inc, ADF4112BRUZ Datasheet - Page 6

• Manufacturer Part Number: ADF4112BRUZ
• Description: IC SYNTH PLL RF 3.0GHZ 16-TSSOP
• Manufacturer: Analog Devices Inc
• Type: Clock/Frequency Synthesizer (RF)r

Specifications of ADF4112BRUZ

• Pll: Yes
• Input: Clock
• Output: Clock
• Number Of Circuits: 1
• Ratio - Input:output: 2:1
• Differential - Input:output: Yes/No
• Frequency - Max: 3GHz
• Divider/multiplier: Yes/No
• Voltage - Supply: 2.7 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 16-TSSOP
• Frequency-max: 3GHz
• Pll Type: Frequency Synthesis
• Frequency: 3GHz
• Supply Current: 6.5mA
• Supply Voltage Range: 2.7V To 5.5V
• Digital Ic Case Style: TSSOP
• No. Of Pins: 16
• Operating Temperature Range: -40°C To +85°C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• For Use With: EVAL-ADF4112EBZ1 - BOARD EVAL FOR ADF4112EVAL-ADF411XEBZ1 - BOARD EVAL FOR ADF411X NO CHIP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

ADF4110/ADF4111/ADF4112/ADF4113
ABSOLUTE MAXIMUM RATINGS
T
Table 3.
Parameter
AV
AV
V
V
Digital I/O Voltage to GND
Analog I/O Voltage to GND
REF
RF
Operating Temperature Range
Storage Temperature Range
Maximum Junction Temperature
TSSOP θ
LFCSP θ
LFCSP θ
Lead Temperature, Soldering
1
ESD CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the
human body and test equipment and can discharge without detection. Although this product features
proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy
electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance
degradation or loss of functionality.
GND = AGND = DGND = 0 V.
P
P
A
IN
Industrial (B Version)
(Paddle Soldered)
(Paddle Not Soldered)
Vapor Phase (60 sec)
Infrared (15 sec)
to GND
to AV
DD
DD
= 25°C, unless otherwise noted
IN
A to RF
, RF
to GND
to DV
DD
JA
JA
JA
IN
A, RF
Thermal Impedance
Thermal Impedance
Thermal Impedance
DD
IN
B
1
IN
B to GND
Rating
−0.3 V to +7 V
−0.3 V to +0.3 V
−0.3 V to +7 V
−0.3 V to +5.5 V
−0.3 V to V
−0.3 V to V
−0.3 V to V
±320 mV
−40°C to +85°C
−65°C to +150°C
150°C
150.4°C/W
122°C/W
216°C/W
215°C
220°C
DD
P
DD
+ 0.3 V
+ 0.3 V
+ 0.3 V
Rev. C | Page 6 of 28
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those listed in the operational sections
of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
This device is a high performance RF integrated circuit with an
ESD rating of <2 kV, and it is ESD sensitive. Proper precautions
should be taken for handling and assembly.
TRANSISTOR COUNT
6425 (CMOS) and 303 (Bipolar).