STL160N3LLH6 STMicroelectronics, STL160N3LLH6 Datasheet - Page 7

• Manufacturer Part Number: STL160N3LLH6
• Description: MOSFET N-CH 30V 160A POWERFLAT56
• Manufacturer: STMicroelectronics
• Series: STripFET™ DeepGATE™r

Specifications of STL160N3LLH6

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 1.3 mOhm @ 17.5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 160A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 61.5nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 6375pF @ 25V
• Power - Max: 80W
• Mounting Type: *
• Package / Case: *
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 497-11204-2

STL160N3LLH6
Figure 8.
Figure 10. Normalized gate threshold voltage
Figure 12. Source-drain diode forward
(norm)
V
GS(th)
V
(V)
(V)
V
0.7
0.6
12
10
0.5
GS
0.8
0.4
0.8
0.4
0.9
1.2
1.0
0.2
1.0
0.6
SD
6
2
8
4
0
-75
0
0
Gate charge vs gate-source voltage Figure 9.
vs temperature
characteristics
20
5
-25
40
10
25
V
15
60
DD
I
D
=35A
=15V
20
80
75
25
100
125
T
T
T
30
J
120
J
=25°C
J
=-55°C
=175°C
35
175
Q
Doc ID 18223 Rev 1
g
(nC)
AM08606v1
AM08608v1
AM08604v1
I
SD
T
(A)
J
(°C)
Figure 11. Normalized on resistance vs
C
R
4000
3000
2000
1000
6000
5000
9000
8000
7000
DS(on)
(norm)
(pF)
1.8
1.4
1.2
1.0
0.8
0.6
1.6
0.4
0
-75
0
Capacitance variations
temperature
5
-25
Crss
10
25
15
Electrical characteristics
75
20
25
125
30
Ciss
Coss
175
AM08605v1
AM08607v1
V
T
DS
J
(°C)
(V)
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