STL160N3LLH6 STMicroelectronics, STL160N3LLH6 Datasheet - Page 4

• Manufacturer Part Number: STL160N3LLH6
• Description: MOSFET N-CH 30V 160A POWERFLAT56
• Manufacturer: STMicroelectronics
• Series: STripFET™ DeepGATE™r

Specifications of STL160N3LLH6

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 1.3 mOhm @ 17.5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 160A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 61.5nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 6375pF @ 25V
• Power - Max: 80W
• Mounting Type: *
• Package / Case: *
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 497-11204-2

Electrical characteristics
2
4/14
Electrical characteristics
(T
Table 5.
Table 6.
V
Symbol
Symbol
R
CASE
V
(BR)DSS
C
I
I
C
GS(th)
DS(on)
C
Q
Q
DSS
GSS
R
Q
oss
rss
iss
gs
gd
G
g
= 25 °C unless otherwise specified).
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Gate input resistance
Drain-source breakdown
voltage
Zero gate voltage drain
current (V
Gate body leakage current
(V
Gate threshold voltage
Static drain-source on
resistance
On/off states
Dynamic
DS
= 0)
Parameter
Parameter
GS
= 0)
Doc ID 18223 Rev 1
V
V
V
V
(see Figure 14)
f=1 MHz gate DC bias = 0
test signal level = 20 mV
open drain
I
V
V
V
V
V
V
D
DS
GS
DD
GS
DS
DS
GS
DS
GS
GS
= 250 µA, V
=0
=15 V, I
= V
= 10 V, I
= 4.5 V, I
= 25 V, f=1 MHz,
=4.5 V
= Max rating,
= Max rating @125 °C
= ±20 V
Test conditions
Test conditions
GS
, I
D
D
D
D
= 35 A
= 17.5 A
= 250 µA
= 17.5 A
GS
= 0
Min.
Min.
30
1
-
-
-
0.0011
0.0016
Typ.
6375
1230
Typ.
61.5
675
1.4
20
24
STL160N3LLH6
0.0013
0.0020
Max.
Max.
±
100
10
-
-
-
1
Unit
nC
nC
nC
Unit
pF
pF
pF
Ω
µA
µA
nA
V
V
Ω
Ω