STL160N3LLH6 STMicroelectronics, STL160N3LLH6 Datasheet - Page 3

• Manufacturer Part Number: STL160N3LLH6
• Description: MOSFET N-CH 30V 160A POWERFLAT56
• Manufacturer: STMicroelectronics
• Series: STripFET™ DeepGATE™r

Specifications of STL160N3LLH6

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 1.3 mOhm @ 17.5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 160A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 61.5nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 6375pF @ 25V
• Power - Max: 80W
• Mounting Type: *
• Package / Case: *
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 497-11204-2

STL160N3LLH6
1
Electrical ratings
Table 2.
1. The value is rated according R
2. The value is rated according R
3. Pulse width limited by safe operating area.
Table 3.
1. When mounted on FR-4 board of 1inch², 2oz Cu, t < 10 sec.
Table 4.
R
Symbol
P
P
Symbol
R
Symbol
thj-pcb
I
I
I
TOT
TOT
DM
I
I
V
V
thj-case
T
D
D
D
D
E
T
I
DS
GS
stg
AV
(1)
(2)
AS
(1)
(2)
j
(3)
(1)
(3)
(1)
Absolute maximum ratings
Drain-source voltage (V
Gate-source voltage
Drain current (continuous) at T
Drain current (continuous) at T
Drain current (continuous) at T
Drain current (continuous) at T
Drain current (pulsed)
Total dissipation at T
Total dissipation at T
Derating factor
Operating junction temperature
Storage temperature
Thermal data
Avalanche data
Thermal resistance junction-case (drain) (steady state)
Thermal resistance junction-ambient
Not-repetitive avalanche current,
(pulse width limited by T
Single pulse avalanche energy
(starting T
J
= 25 °C, I
thj-c
thj-pcb.
Doc ID 18223 Rev 1
.
C
C
D
Parameter
= 25 °C
= 25 °C
Parameter
Parameter
GS
= I
j
max)
AV
= 0)
)
C
C
C
C
=100 °C
= 25 °C
= 100 °C
= 25 °C
-55 to 150
Value
Value
Value
± 20
0.03
21.8
160
100
140
1.56
31.3
900
30
35
80
35
4
Electrical ratings
W/°C
°C/W
°C/W
Unit
Unit
Unit
°C
mJ
W
W
V
V
A
A
A
A
A
A
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