STL160N3LLH6 STMicroelectronics, STL160N3LLH6 Datasheet - Page 5

• Manufacturer Part Number: STL160N3LLH6
• Description: MOSFET N-CH 30V 160A POWERFLAT56
• Manufacturer: STMicroelectronics
• Series: STripFET™ DeepGATE™r

Specifications of STL160N3LLH6

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 1.3 mOhm @ 17.5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 160A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 61.5nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 6375pF @ 25V
• Power - Max: 80W
• Mounting Type: *
• Package / Case: *
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 497-11204-2

STL160N3LLH6
Table 7.
Table 8.
1. Pulse width limited by safe operating area.
2. Pulsed: pulse duration=300µs, duty cycle 1.5%.
Symbol
Symbol
I
V
SDM
t
t
I
d(on)
d(off)
RRM
SD
I
Q
t
SD
t
t
r
rr
f
rr
(2)
(1)
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Switching times
Source drain diode
Parameter
Parameter
Doc ID 18223 Rev 1
V
R
(see Figure 13)
I
I
di/dt = 100 A/µs,
V
DD
G
SD
SD
DD
=4.7 Ω, V
Test conditions
=15 V, I
= 35 A, V
= 35 A,
Test conditions
=25 V
D
= 17.5 A,
GS
GS
=10 V
=0
Electrical characteristics
Min.
Min.
-
-
-
-
-
107.5
Typ.
37.2
Typ.
18.5
1.9
36
32
54
Max.
Max.
140
1.1
35
-
Unit
Unit
nC
ns
ns
ns
ns
ns
A
A
V
A
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