CNY171SR2M Fairchild Semiconductor, CNY171SR2M Datasheet - Page 2

• Manufacturer Part Number: CNY171SR2M
• Description: Transistor Output Optocouplers Optocoupler Hi Bvceo Phototransistor
• Manufacturer: Fairchild Semiconductor

Specifications of CNY171SR2M

• Input Type: DC
• Output Type: DC
• Output Device: Transistor With Base
• Number Of Elements: 1
• Reverse Breakdown Voltage: 6V
• Forward Voltage: 1.65V
• Forward Current: 60mA
• Collector-emitter Voltage: 70V
• Package Type: PDIP W SMD
• Isolation Voltage: 5250Vrms
• Power Dissipation: 250mW
• Collector-emitter Saturation Voltage: 0.4V
• Current Transfer Ratio: 80%
• Fall Time: 20000ns
• Rise Time: 4000ns
• Pin Count: 6
• Mounting: Surface Mount
• Operating Temp Range: -55C to 100C
• Operating Temperature Classification: Industrial
• Configuration: 1 Channel
• Maximum Collector Emitter Voltage: 70 V
• Maximum Collector Emitter Saturation Voltage: 0.4 V
• Maximum Forward Diode Voltage: 1.65 V
• Maximum Power Dissipation: 250 mW
• Maximum Operating Temperature: + 100 C
• Minimum Operating Temperature: - 55 C
• Package / Case: PDIP-6 Gull Wing
• Maximum Fall Time: 20 us
• Maximum Input Diode Current: 60 mA
• Maximum Reverse Diode Voltage: 6 V
• Maximum Rise Time: 4 us
• Lead Free Status / RoHS Status: Compliant

CNY17-1, CNY17-3, CNY17-2, CNY17-4 Rev. 1.0.2
Electrical Characteristics
Individual Component Characteristics
Parameters
TOTAL DEVICE
Storage Temperature
Operating Temperature
Lead Solder Temperature
Total Device Power Dissipation @ 25°C (LED plus detector)
Derate Linearly From 25°C
EMITTER
Continuous Forward Current
Reverse Voltage
Forward Current - Peak (1 µs pulse, 300 pps)
LED Power Dissipation 25°C Ambient
Derate Linearly From 25°C
DETECTOR
Detector Power Dissipation @ 25°C
Derate Linearly from 25°C
Parameters
EMITTER
Input Forward Voltage
Capacitance
Reverse Leakage Current V
DETECTOR
Breakdown Voltage
Leakage Current
Capacitance
Collector to Emitter
Collector to Base
Emitter to Collector
Collector to Emitter
Collector to Base
Collector to Emitter
Collector to Base
Emitter to Base
I
I
V
I
I
I
V
V
V
V
V
F
F
C
C
E
F
R
CE
CB
CE
CB
EB
= 60 mA
= 10 mA
= 100 µA, I
= 1.0 mA, I
= 10 µA, I
= 0 V, f = 1.0 MHz
= 6 V
Test Conditions
= 10 V, I
= 10 V, I
= 0, f = 1 MHz
= 0, f = 1 MHz
= 0, f = 1 MHz
F
(T
F
F
F
F
= 0
= 0
= 0
A
= 0
= 0
= 25°C Unless otherwise specified.)
Symbol
BV
BV
BV
I
I
C
C
C
CEO
CBO
V
C
I
CEO
CBO
ECO
R
CE
CB
EB
2
F
J
Symbol
I
T
T
T
F
P
V
P
P
OPR
STG
SOL
I
(pk)
F
D
R
D
D
Device
non -M
non -M
-M
-M
All
All
All
All
All
All
All
All
All
Device
non -M
non -M
non -M
non -M
non -M
non -M
non -M
non -M
All
All
All
-M
-M
-M
All
-M
-M
-M
-M
-M
Min
70
70
7
260 for 10 sec
-55 to +150
-55 to +100
0.001
Typ
1.35
1.15
100
120
50
Value
18
10
20
10
1
8
2.94
3.50
1.41
1.76
2.67
250
260
120
135
150
200
1.5
3.0
1.8
60
90
6
Max
1.65
1.50
10
50
20
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Units
mW/°C
mW/°C
mW/°C
mW
mW
mW
mA
°C
°C
°C
V
A
Units
µA
nA
nA
pF
pF
pF
pF
V
V
V
V