FZ1200R12KE3 Infineon Technologies, FZ1200R12KE3 Datasheet - Page 7

• Manufacturer Part Number: FZ1200R12KE3
• Description: IGBT Transistors 1200V 1200A SINGLE
• Manufacturer: Infineon Technologies

Specifications of FZ1200R12KE3

• Channel Type: N
• Collector-emitter Voltage: 1.2kV
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 125C
• Operating Temperature Classification: Automotive
• Configuration: Dual Common Emitter Common Gate
• Collector- Emitter Voltage Vceo Max: 1200 V
• Collector-emitter Saturation Voltage: 1.7 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Continuous Collector Current At 25 C: 1200 A
• Gate-emitter Leakage Current: 400 nA
• Power Dissipation: 5.6 W
• Maximum Operating Temperature: + 125 C
• Package / Case: IHM 130X140-7
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Ic (max): 1,200.0 A
• Vce(sat) (typ): 1.7 V
• Technology: IGBT3
• Housing: IHM 130 mm
• Lead Free Status / RoHS Status: Compliant

IGBT-Module
IGBT-Modules
Transienter Wärmewiderstand
Transient thermal impedance
Sicherer Arbeitsbereich (RBSOA)
Reverse bias safe operation area (RBSOA)
Technische Information / technical information
0,001
3000
2700
2400
2100
1800
1500
1200
0,01
900
600
300
0,1
0,001
0
r
r
i
i
0
[K/kW] : Diode
t
[K/kW] : IGBT
t
i
i
[s] : Diode
[s] : IGBT
i
200
IC,Chip
0,01
6,897E-01
4,452E-01
400
11,48
2,63
1
FZ1200R12KE3
7 (8)
600
IC,Chip
5,634E-02
7,451E-02
V
12,60
t [s]
8,62
CE
0,1
2
[V]
800
Z
V
2,997E-02
2,647E-02
GE
thJC
=±15V, T
13,23
8,49
3
= f (t)
1000
Zth : IGBT
Zth : Diode
1
vj
vorläufige Daten
preliminary data
=125°C
3,820E-03
2,850E-03
DB_FZ1200R12KE3_2.0.xls
1200
2,26
2,69
4
1400
10
2002-07-29