FZ1200R12KE3 Infineon Technologies, FZ1200R12KE3 Datasheet - Page 6

• Manufacturer Part Number: FZ1200R12KE3
• Description: IGBT Transistors 1200V 1200A SINGLE
• Manufacturer: Infineon Technologies

Specifications of FZ1200R12KE3

• Channel Type: N
• Collector-emitter Voltage: 1.2kV
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 125C
• Operating Temperature Classification: Automotive
• Configuration: Dual Common Emitter Common Gate
• Collector- Emitter Voltage Vceo Max: 1200 V
• Collector-emitter Saturation Voltage: 1.7 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Continuous Collector Current At 25 C: 1200 A
• Gate-emitter Leakage Current: 400 nA
• Power Dissipation: 5.6 W
• Maximum Operating Temperature: + 125 C
• Package / Case: IHM 130X140-7
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Ic (max): 1,200.0 A
• Vce(sat) (typ): 1.7 V
• Technology: IGBT3
• Housing: IHM 130 mm
• Lead Free Status / RoHS Status: Compliant

,
IGBT-Module
IGBT-Modules
Schaltverluste (typisch)
Switching losses (typical)
Schaltverluste (typisch)
Switching losses (typical)
Technische Information / technical information
800
700
600
500
400
300
200
100
800
700
600
500
400
300
200
100
0
0
0
0
300
2
Eon
Eoff
Erec
Eon
Eoff
Erec
4
600
6
FZ1200R12KE3
900
6 (8)
V
V
E
E
GE
GE
8
on
on
=±15V, R
=±15V, I
R
I
1200
C
= f (I
= f (R
G
[A]
[W]
C
10
gon
=1200A, V
C
G
) , E
=1,8W, R
) , E
1500
off
CE
off
12
goff
=600V, T
= f (I
=0,62W, V
= f (R
1800
C
) , E
vj
14
vorläufige Daten
preliminary data
G
=125°C
CE
) , E
=600V, T
DB_FZ1200R12KE3_2.0.xls
rec
2100
rec
16
= f (I
vj
= f (R
=125°C
C
2400
)
2002-07-29
18
G
)