FZ1200R12KE3 Infineon Technologies, FZ1200R12KE3 Datasheet - Page 8

• Manufacturer Part Number: FZ1200R12KE3
• Description: IGBT Transistors 1200V 1200A SINGLE
• Manufacturer: Infineon Technologies

Specifications of FZ1200R12KE3

• Channel Type: N
• Collector-emitter Voltage: 1.2kV
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 125C
• Operating Temperature Classification: Automotive
• Configuration: Dual Common Emitter Common Gate
• Collector- Emitter Voltage Vceo Max: 1200 V
• Collector-emitter Saturation Voltage: 1.7 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Continuous Collector Current At 25 C: 1200 A
• Gate-emitter Leakage Current: 400 nA
• Power Dissipation: 5.6 W
• Maximum Operating Temperature: + 125 C
• Package / Case: IHM 130X140-7
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Ic (max): 1,200.0 A
• Vce(sat) (typ): 1.7 V
• Technology: IGBT3
• Housing: IHM 130 mm
• Lead Free Status / RoHS Status: Compliant

IGBT-Module
IGBT-Modules
Gehäusemaße / Schaltbild
Package outline / Circuit diagram
Technische Information / technical information
29.5
28
2
± 0.5
+ 0.2
± 0.5
M
4.0 tief
2.5 tief
14.75
10.65
28.25
48.8
C
± 0.2
± 0.5
± 0.2
18
± 0.5
130
E
114
± 0.2
18.25
C
E
FZ1200R12KE3
61.5
14
± 0.5
8
± 0.1
± 0.3
± 0.5
G
10.35
8 (8)
± 0.3
± 0.5
± 0.2
M8
C
E
ø7
+0.1
(für M6-Schraube)
vorläufige Daten
preliminary data
DB_FZ1200R12KE3_2.0.xls
IH4
C
G
E
C
G
E
(K)
(A)
C
E
external connection
(to be done)
C
E
C
E
DD...
FD...
FZ...
2002-07-29
(K)
(A)
C
E
E
C
C
E