FZ1200R12KE3 Infineon Technologies, FZ1200R12KE3 Datasheet - Page 2

• Manufacturer Part Number: FZ1200R12KE3
• Description: IGBT Transistors 1200V 1200A SINGLE
• Manufacturer: Infineon Technologies

Specifications of FZ1200R12KE3

• Channel Type: N
• Collector-emitter Voltage: 1.2kV
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 125C
• Operating Temperature Classification: Automotive
• Configuration: Dual Common Emitter Common Gate
• Collector- Emitter Voltage Vceo Max: 1200 V
• Collector-emitter Saturation Voltage: 1.7 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Continuous Collector Current At 25 C: 1200 A
• Gate-emitter Leakage Current: 400 nA
• Power Dissipation: 5.6 W
• Maximum Operating Temperature: + 125 C
• Package / Case: IHM 130X140-7
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Ic (max): 1,200.0 A
• Vce(sat) (typ): 1.7 V
• Technology: IGBT3
• Housing: IHM 130 mm
• Lead Free Status / RoHS Status: Compliant

Einschaltverzögerungszeit (ind. Last)
turn on delay time (inductive load)
Anstiegszeit (induktive Last)
rise time (inductive load)
Abschaltverzögerungszeit (ind. Last)
turn off delay time (inductive load)
Fallzeit (induktive Last)
fall time (inductive load)
Einschaltverlustenergie pro Puls
turn on energy loss per pulse
Ausschaltverlustenergie pro Puls
turn off energy loss per pulse
Kurzschlussverhalten
SC data
Modulindiktivität
stray inductance module
Leitungswiderstand, Anschluss-Chip
lead resistance, terminal-chip
Durchlassspannung
forward voltage
Rückstromspitze
peak reverse recovery current
Sperrverzögerungsladung
recoverred charge
Ausschaltenergie pro Puls
reverse recovery energy
IGBT-Module
IGBT-Modules
Charakteristische Werte / characteristic values
Transistor Wechselrichter / transistor inverter
Charakteristische Werte / characteristic values
Diode Wechselrichter / diode inverter
Technische Information / technical information
I
V
V
I
V
V
I
V
V
I
V
V
I
V
I
V
t
V
T
I
I
I
V
V
I
V
V
I
V
V
C
C
C
C
C
C
P
F
F
F
F
F
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
CC
c
= I
= I
=I
R
R
=I
R
R
=I
R
R
= 1200A, V
= 1200A, V
= 1200A, V
= 1200A, V
= 1200A, V
= 1200A, V
£ 10µs, V
= 25°C
= 600V, V
= 600V, V
= 600V, V
= 600V, V
= 600V, V
= 600V, V
=±15V, R
=±15V, R
=±15V, R
=±15V, R
=±15V, R
=±15V, R
=±15V, R
=±15V, R
=±15V, R
=±15V, R
C,nom
C,nom
C,nom
= 900V, V
C, nom
C, nom
, -di
, -di
, -di
, V
, V
FZ1200R12KE3
Gon
Gon
Gon
Gon
Goff
Goff
Goff
Goff
Gon
Goff
F
F
F
GE
GE
GE
/dt= 4800A/µs
GE
GE
/dt= 4800A/µs
GE
GE
/dt= 4800A/µs
GE
GE
CC
CC
CC
CC
CC
CC
2 (8)
CEmax
= 0V, T
= 0V, T
=1,8W, T
=1,8W, T
=1,8W, T
=1,8W, T
=1,8W, T
=0,62W, T
=0,62W,T
=0,62W, T
=0,62W,T
=0,62W, T
£ 15V, T
= -15V, T
= -15V, T
= -15V, T
= -15V, T
= -15V, T
= -15V, T
= 600V
= 600V
= 600V
= 600V
= 600V, L
= 600V, L
= V
vj
vj
vj
vj
vj
vj
vj
CES
= 25°C
= 125°C
vj
vj
=25°C
= 125°C
=25°C
= 125°C
= 125°C
vj
vj
vj
Vj
= 125°C
= 125°C
=25°C
=25°C
= 125°C
vj
vj
vj
vj
vj
vj
s
s
£ 125°C
= 25°C
= 125°C
= 25°C
= 125°C
= 25°C
= 125°C
= 60nH
= 60nH
- L
sCE
· çdi/dtç
R
L
CC´/EE´
t
t
E
E
E
I
d,off
I
V
d,on
Q
sCE
SC
RM
t
t
rec
off
r
f
on
F
r
vorläufige Daten
preliminary data
min.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
DB_FZ1200R12KE3_2.0.xls
4800
0,54
0,64
0,22
0,23
0,82
0,96
0,15
0,18
0,19
typ.
245
190
390
620
150
2,0
1,8
12
55
13
35
max.
2,5
2002-07-29
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
mW
mJ
mJ
nH
µC
µC
mJ
mJ
µs
µs
µs
µs
µs
µs
µs
µs
A
V
V
A
A