BSM10GD120DN2 Infineon Technologies, BSM10GD120DN2 Datasheet - Page 7

• Manufacturer Part Number: BSM10GD120DN2
• Description: IGBT MODULE, 1200V, ECONOPACK3
• Manufacturer: Infineon Technologies

Specifications of BSM10GD120DN2

• Channel Type: N
• Configuration: Hex
• Collector-emitter Voltage: 1.2kV
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 150C
• Operating Temperature Classification: Automotive
• Module Configuration: Six
• Dc Collector Current: 15A
• Collector Emitter Voltage Vces: 3.2V
• Power Dissipation Max: 80W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -40°C To
• Power Dissipation Pd: 80W
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Supplier Unconfirmed

BSM 10 GD 120 DN2
Typ. switching time
I = f (I
Typ. switching losses
E = f (I
par.: V
par.: V
E
t
mWs
10
10
10
C
ns
C
) , inductive load , T
CE
CE
7
5
4
3
2
1
0
3
2
1
) , inductive load , T
0
0
= 600 V, V
= 600 V, V
5
5
GE
GE
10
10
= ± 15 V, R
= ± 15 V, R
j
j
= 125°C
= 125°C
15
15
G
G
= 150
= 150
A
A
tdoff
tr
tdon
tf
Eon
Eoff
I
I
C
C
25
25
7
Typ. switching time
t = f (R
Typ. switching losses
E = f (R
par.: V
par.: V
E
t
mWs
10
10
10
ns
G
CE
CE
7
5
4
3
2
1
0
3
2
1
G
) , inductive load , T
0
0
) , inductive load , T
= 600 V, V
= 600V, V
50
50
100
100
GE
GE
150
150
= ± 15 V, I
= ± 15 V, I
j
200
200
j
= 125°C
= 125°C
250
250
C
C
= 10 A
= 10 A
tdoff
tdon
tr
tf
Eon
Eoff
2006-01-31
R
R
G
G
350
350