BSM10GD120DN2 Infineon Technologies, BSM10GD120DN2 Datasheet - Page 2

• Manufacturer Part Number: BSM10GD120DN2
• Description: IGBT MODULE, 1200V, ECONOPACK3
• Manufacturer: Infineon Technologies

Specifications of BSM10GD120DN2

• Channel Type: N
• Configuration: Hex
• Collector-emitter Voltage: 1.2kV
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 150C
• Operating Temperature Classification: Automotive
• Module Configuration: Six
• Dc Collector Current: 15A
• Collector Emitter Voltage Vces: 3.2V
• Power Dissipation Max: 80W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -40°C To
• Power Dissipation Pd: 80W
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Supplier Unconfirmed

BSM 10 GD 120 DN2
Electrical Characteristics, at T
Parameter
Static Characteristics
Gate threshold voltage
V
Collector-emitter saturation voltage
V
V
V
V
Gate-emitter leakage current
V
AC Characteristics
Transconductance
V
Input capacitance
V
Output capacitance
V
Reverse transfer capacitance
V
Zero gate voltage collector current
GE
GE
GE
CE
CE
GE
CE
CE
CE
CE
= V
= 15 V, I
= 15 V, I
= 1200 V, V
= 1200 V, V
= 20 V, V
= 20 V, I
= 25 V, V
= 25 V, V
= 25 V, V
CE,
I
C
C
C
C
GE
GE
GE
CE
= 0.32 mA
= 10 A, T
= 10 A, T
= 10 A
GE
GE
= 0 V
= 0 V, f = 1 MHz
= 0 V, f = 1 MHz
= 0 V, f = 1 MHz
= 0 V, T
= 0 V, T
j
j
= 25 °C
= 125 °C
j
j
= 25 °C
= 125 °C
j
= 25 °C, unless otherwise specified
2
Symbol
V
V
I
I
g
C
C
C
CES
GES
fs
GE(th)
CE(sat)
iss
oss
rss
min.
-
-
-
-
-
-
-
-
4.5
4.7
Values
typ.
-
-
5.5
2.7
3.3
0.2
0.8
530
80
38
max.
-
-
-
-
-
6.5
3.2
3.9
0.4
120
2006-01-31
Unit
V
mA
nA
S
pF