BSM10GD120DN2 Infineon Technologies, BSM10GD120DN2 Datasheet - Page 4

• Manufacturer Part Number: BSM10GD120DN2
• Description: IGBT MODULE, 1200V, ECONOPACK3
• Manufacturer: Infineon Technologies

Specifications of BSM10GD120DN2

• Channel Type: N
• Configuration: Hex
• Collector-emitter Voltage: 1.2kV
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 150C
• Operating Temperature Classification: Automotive
• Module Configuration: Six
• Dc Collector Current: 15A
• Collector Emitter Voltage Vces: 3.2V
• Power Dissipation Max: 80W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -40°C To
• Power Dissipation Pd: 80W
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Supplier Unconfirmed

BSM 10 GD 120 DN2
Power dissipation
P
parameter: T
P
Collector current
I
parameter: V
C
tot
I
tot
C
= (T
= (T
90
70
60
50
40
30
20
10
15
13
12
11
10
W
A
0
9
8
7
6
5
4
3
2
1
0
C
0
0
)
C
)
20
20
j
GE
150 °C
40
40
15 V , T
60
60
j
80
80
150 °C
100
100
120
120
T
T
°C
°C
C
C
160
160
4
Safe operating area
I
parameter: D = 0, T
Transient thermal impedance
Z
parameter: D = t
Z
C
thJC
I
th JC
C
= (V
K/W
10
10
10
10
10
10
10
10
10
10
10
= (t
A
-1
-2
-1
-2
-3
-4
2
1
0
1
0
CE
10
10
0
-5
)
p
)
single pulse
10
p
10
-4
/ T
1
C
= 25°C , T
10
-3
10
2
10
j
-2
IGBT
DC
150 °C
t
10
p = 46.0µs
2006-01-31
D = 0.50
10
3
100 µs
1 ms
10 ms
V
t
-1
p
0.20
0.10
0.05
0.02
0.01
CE
V
s
10
0