BSM10GD120DN2 Infineon Technologies, BSM10GD120DN2 Datasheet - Page 3

• Manufacturer Part Number: BSM10GD120DN2
• Description: IGBT MODULE, 1200V, ECONOPACK3
• Manufacturer: Infineon Technologies

Specifications of BSM10GD120DN2

• Channel Type: N
• Configuration: Hex
• Collector-emitter Voltage: 1.2kV
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 150C
• Operating Temperature Classification: Automotive
• Module Configuration: Six
• Dc Collector Current: 15A
• Collector Emitter Voltage Vces: 3.2V
• Power Dissipation Max: 80W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -40°C To
• Power Dissipation Pd: 80W
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Supplier Unconfirmed

BSM 10 GD 120 DN2
Electrical Characteristics, at T
Parameter
Switching Characteristics, Inductive Load at T
Turn-on delay time
V
R
Rise time
V
R
Turn-off delay time
V
R
Fall time
V
R
Free-Wheel Diode
Diode forward voltage
I
I
Reverse recovery time
I
di
Reverse recovery charge
I
di
T
T
F
F
F
F
CC
CC
CC
CC
j
j
Gon
Gon
Goff
Goff
F
F
= 10 A, V
= 10 A, V
= 10 A, V
= 10 A, V
= 25 °C
= 125 °C
/dt = -400 A/µs, T
/dt = -400 A/µs
= 600 V, V
= 600 V, V
= 600 V, V
= 600 V, V
= 150
= 150
= 150
= 150
GE
GE
R
R
= -600 V, V
= -600 V, V
= 0 V, T
= 0 V, T
GE
GE
GE
GE
= 15 V, I
= 15 V, I
= -15 V, I
= -15 V, I
j
= 125 °C
j
j
= 25 °C
= 125 °C
GE
GE
C
C
C
C
= 0 V
= 0 V
= 10 A
= 10 A
= 10 A
= 10 A
j
= 25 °C, unless otherwise specified
Symbol
t
t
t
t
V
t
Q
3
d(on)
r
d(off)
f
rr
F
rr
j
= 125 °C
min.
-
-
-
-
-
-
-
-
-
Values
typ.
55
50
380
80
2.9
2.6
0.5
0.4
1.2
max.
-
-
-
-
110
100
570
120
3.4
2006-01-31
Unit
ns
V
µs
µC