MOC207R2M Fairchild Semiconductor, MOC207R2M Datasheet - Page 3
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MOC207R2M
Manufacturer Part Number
MOC207R2M
Description
Transistor Output Optocouplers 8-Pin Optocoupler Phototransistor
Manufacturer
Fairchild Semiconductor
Specifications of MOC207R2M
Input Type
DC
Output Type
DC
Output Device
Transistor With Base
Number Of Elements
1
Reverse Breakdown Voltage
6V
Forward Voltage
1.5V
Forward Current
60mA
Collector-emitter Voltage
70V
Package Type
SOIC
Collector Current (dc) (max)
150mA
Isolation Voltage
2500Vrms
Power Dissipation
250mW
Collector-emitter Saturation Voltage
0.4V
Current Transfer Ratio
200%
Pin Count
8
Mounting
Surface Mount
Operating Temp Range
-40C to 100C
Operating Temperature Classification
Industrial
Configuration
1 Channel
Maximum Collector Emitter Voltage
70 V
Maximum Collector Emitter Saturation Voltage
0.4 V
Maximum Forward Diode Voltage
1.5 V
Maximum Collector Current
150 mA
Maximum Power Dissipation
250 mW
Maximum Operating Temperature
+ 100 C
Minimum Operating Temperature
- 40 C
Package / Case
SOIC-8 Narrow
Maximum Input Diode Current
60 mA
Maximum Reverse Diode Voltage
6 V
Lead Free Status / RoHS Status
Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MOC207R2M
Manufacturer:
FAIRCHIL
Quantity:
27 000
Part Number:
MOC207R2M
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
©2005 Fairchild Semiconductor Corporation
MOC205M, MOC206M, MOC207M, MOC208M Rev. 1.0.1
Electrical Characteristics
*Typical values at T
Notes:
1. Isolation Surge Voltage, V
2. For this test, Pins 1 and 2 are common and Pins 5, 6 and 7 are common.
3. V
4. Current Transfer Ratio (CTR) = I
Symbol
EMITTER
DETECTOR
COUPLED
V
BV
BV
I
I
CE (sat)
CTR
V
R
C
CEO1
CEO2
C
C
V
t
t
ISO
I
ISO
ISO
ISO
on
off
t
t
R
CEO
ECO
CE
IN
r
f
F
rating of 2500 V
Input Forward Voltage
Reverse Leakage Current
Input Capacitance
Collector-Emitter Dark Current
Collector-Emitter Breakdown Voltage
Emitter-Collector Breakdown Voltage
Collector-Emitter Capacitance
Collector-Output Current
Isolation Surge Voltage
Isolation Resistance
Collector-Emitter Saturation Voltage
Isolation Capacitance
Turn-On Time
Turn-Off Time
Rise Time
Fall Time
MOC205M
MOC206M
MOC207M
MOC208M1
A
= 25°C
AC(rms)
Parameter
ISO
(2)
for t = 1 min. is equivalent to a rating of 3,000 V
, is an internal device dielectric breakdown rating.
(2)
(1)(2)(3)
C
(4)
/I
(T
F
A
x 100%.
= 25°C unless otherwise specified)
I
V
V
V
I
I
f = 1.0 MHz, V
I
f = 60 Hz AC Peak, t = 1 min.
V = 500V
I
V = 0V, f = 1MHz
I
R
I
R
I
R
I
R
F
C
E
F
C
C
C
C
C
R
CE
CE
L
L
L
L
= 10mA
= 10mA, V
= 100µA
= 100µA
= 2mA, I
= 2.0mA, V
= 2.0mA, V
= 2.0mA, V
= 2.0 mA, V
= 100
= 100
= 100
= 100
= 6.0V
= 10V, T
= 10V, T
Test Conditions
3
F
(Fig. 6)
(Fig. 6)
(Fig. 6)
(Fig. 6)
A
A
CE
= 10mA
CC
CC
CC
CE
CC
= 25°C
= 100°C
= 10V
= 10 V,
= 10V,
= 10V,
= 0
= 10 V,
AC(rms)
Min.
2500
10
100
7.0
70
40
63
40
11
for t = 1 sec.
Typ.*
0.001
1.15
100
1.0
1.0
7.0
0.2
7.5
5.7
3.2
4.7
18
10
Max.
100
125
200
125
1.5
0.4
50
80
www.fairchildsemi.com
Vac(rms)
Unit
µA
pF
nA
µA
pF
pF
µs
µs
µs
µs
%
V
V
V
V