MOC207R2M Fairchild Semiconductor, MOC207R2M Datasheet - Page 3

• Manufacturer Part Number: MOC207R2M
• Description: Transistor Output Optocouplers 8-Pin Optocoupler Phototransistor
• Manufacturer: Fairchild Semiconductor

Specifications of MOC207R2M

• Input Type: DC
• Output Type: DC
• Output Device: Transistor With Base
• Number Of Elements: 1
• Reverse Breakdown Voltage: 6V
• Forward Voltage: 1.5V
• Forward Current: 60mA
• Collector-emitter Voltage: 70V
• Package Type: SOIC
• Collector Current (dc) (max): 150mA
• Isolation Voltage: 2500Vrms
• Power Dissipation: 250mW
• Collector-emitter Saturation Voltage: 0.4V
• Current Transfer Ratio: 200%
• Pin Count: 8
• Mounting: Surface Mount
• Operating Temp Range: -40C to 100C
• Operating Temperature Classification: Industrial
• Configuration: 1 Channel
• Maximum Collector Emitter Voltage: 70 V
• Maximum Collector Emitter Saturation Voltage: 0.4 V
• Maximum Forward Diode Voltage: 1.5 V
• Maximum Collector Current: 150 mA
• Maximum Power Dissipation: 250 mW
• Maximum Operating Temperature: + 100 C
• Minimum Operating Temperature: - 40 C
• Package / Case: SOIC-8 Narrow
• Maximum Input Diode Current: 60 mA
• Maximum Reverse Diode Voltage: 6 V
• Lead Free Status / RoHS Status: Compliant

©2005 Fairchild Semiconductor Corporation
MOC205M, MOC206M, MOC207M, MOC208M Rev. 1.0.1
Electrical Characteristics
*Typical values at T
Notes:
1. Isolation Surge Voltage, V
2. For this test, Pins 1 and 2 are common and Pins 5, 6 and 7 are common.
3. V
4. Current Transfer Ratio (CTR) = I
Symbol
EMITTER
DETECTOR
COUPLED
V
BV
BV
I
I
CE (sat)
CTR
V
R
C
CEO1
CEO2
C
C
V
t
t
ISO
I
ISO
ISO
ISO
on
off
t
t
R
CEO
ECO
CE
IN
r
f
F
rating of 2500 V
Input Forward Voltage
Reverse Leakage Current
Input Capacitance
Collector-Emitter Dark Current
Collector-Emitter Breakdown Voltage
Emitter-Collector Breakdown Voltage
Collector-Emitter Capacitance
Collector-Output Current
Isolation Surge Voltage
Isolation Resistance
Collector-Emitter Saturation Voltage
Isolation Capacitance
Turn-On Time
Turn-Off Time
Rise Time
Fall Time
MOC205M
MOC206M
MOC207M
MOC208M1
A
= 25°C
AC(rms)
Parameter
ISO
(2)
for t = 1 min. is equivalent to a rating of 3,000 V
, is an internal device dielectric breakdown rating.
(2)
(1)(2)(3)
C
(4)
/I
(T
F
A
x 100%.
= 25°C unless otherwise specified)
I
V
V
V
I
I
f = 1.0 MHz, V
I
f = 60 Hz AC Peak, t = 1 min.
V = 500V
I
V = 0V, f = 1MHz
I
R
I
R
I
R
I
R
F
C
E
F
C
C
C
C
C
R
CE
CE
L
L
L
L
= 10mA
= 10mA, V
= 100µA
= 100µA
= 2mA, I
= 2.0mA, V
= 2.0mA, V
= 2.0mA, V
= 2.0 mA, V
= 100
= 100
= 100
= 100
= 6.0V
= 10V, T
= 10V, T
Test Conditions
3
F
(Fig. 6)
(Fig. 6)
(Fig. 6)
(Fig. 6)
A
A
CE
= 10mA
CC
CC
CC
CE
CC
= 25°C
= 100°C
= 10V
= 10 V,
= 10V,
= 10V,
= 0
= 10 V,
AC(rms)
Min.
2500
10
100
7.0
70
40
63
40
11
for t = 1 sec.
Typ.*
0.001
1.15
100
1.0
1.0
7.0
0.2
7.5
5.7
3.2
4.7
18
10
Max.
100
125
200
125
1.5
0.4
50
80
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Vac(rms)
Unit
µA
pF
nA
µA
pF
pF
µs
µs
µs
µs
%
V
V
V
V