MT45W2MW16BGB-701 IT Micron Technology Inc, MT45W2MW16BGB-701 IT Datasheet - Page 57
MT45W2MW16BGB-701 IT
Manufacturer Part Number
MT45W2MW16BGB-701 IT
Description
Manufacturer
Micron Technology Inc
Datasheet
1.MT45W2MW16BGB-701_IT.pdf
(61 pages)
Specifications of MT45W2MW16BGB-701 IT
Operating Temperature (max)
85C
Operating Temperature (min)
-40C
Mounting
Surface Mount
Operating Temperature Classification
Industrial
Lead Free Status / RoHS Status
Compliant
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Figure 46:
PDF: 09005aef82832fa2/Source: 09005aef82832f5f
32mb_burst_cr1_0_p24z_2.fm - Rev. E 9/08 EN
DQ[15:0]
LB#/UB#
A[20:0]
ADV#
WAIT
WE#
OE#
CLK
CE#
Burst READ Followed by Asynchronous WRITE Using ADV#
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
IH
IL
IH
IL
IH
IL
IH
IL
IH
IL
IH
IL
IH
IL
OH
OL
OH
OL
Note:
READ burst identified
Valid address
t SP
t CSP
(WE# = HIGH)
t SP
t SP
t SP
t CEW
When configured for synchronous mode (BCR[15] = 0), a refresh opportunity must be pro-
vided every
tions: clocked CE# HIGH or CE# HIGH for greater than 15ns. Note that CellularRAM
Workgroup specification 1.0 requires CE# to be clocked HIGH to terminate the burst.
t HD
t HD
t HD
High-Z
32Mb: 2 Meg x 16 Async/Page/Burst CellularRAM 1.0 Memory
t ABA
t
CEM. A refresh opportunity is satisfied by either of the following two condi-
t OLZ
t BOE
t ACLK
t VPH
t KHTL
Valid output
t CLK
57
t HD
t KOH
t OHZ
t HZ
t CBPH
Micron Technology, Inc., reserves the right to change products or specifications without notice.
High-Z
1
t CEW
t AS
Valid address
t VP
t AVS
t AS
t AVH
t CW
t BW
t AW
Don’t Care
t WP
t VS
©2007 Micron Technology, Inc. All rights reserved.
Valid input
t DW
Timing Diagrams
t HZ
Undefined
t WPH
t DH
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