XC3S500E-4FT256I Xilinx Inc, XC3S500E-4FT256I Datasheet - Page 41
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XC3S500E-4FT256I
Manufacturer Part Number
XC3S500E-4FT256I
Description
FPGA Spartan®-3E Family 500K Gates 10476 Cells 572MHz 90nm (CMOS) Technology 1.2V 256-Pin FTBGA
Manufacturer
Xilinx Inc
Series
Spartan™-3Er
Datasheet
1.XC3S100E-4VQG100C.pdf
(233 pages)
Specifications of XC3S500E-4FT256I
Package
256FTBGA
Family Name
Spartan®-3E
Device Logic Cells
10476
Device Logic Units
1164
Device System Gates
500000
Number Of Registers
9312
Maximum Internal Frequency
572 MHz
Typical Operating Supply Voltage
1.2 V
Maximum Number Of User I/os
190
Ram Bits
368640
Number Of Logic Elements/cells
10476
Number Of Labs/clbs
1164
Total Ram Bits
368640
Number Of I /o
190
Number Of Gates
500000
Voltage - Supply
1.14 V ~ 1.26 V
Mounting Type
Surface Mount
Operating Temperature
-40°C ~ 100°C
Package / Case
256-LBGA
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
XC3S500E-4FT256I
Manufacturer:
XILINX
Quantity:
1 400
Company:
Part Number:
XC3S500E-4FT256I
Manufacturer:
XILINX
Quantity:
360
Part Number:
XC3S500E-4FT256I
Manufacturer:
XILXIN
Quantity:
20 000
Table 25: Block RAM Function Table (Continued)
There are a number of different conditions under which data
can be accessed at the DO outputs. Basic data access
always occurs when the WE input is inactive. Under this
condition, data stored in the memory location addressed by
the ADDR lines passes through a output latch to the DO
outputs. The timing for basic data access is shown in the
Table 26: WRITE_MODE Effect on Data Output Latches During Write Operations
DS312-2 (v3.8) August 26, 2009
Product Specification
GSR
WRITE_FIRST
Read After Write
READ_FIRST
Read Before Write
NO_CHANGE
No Read on Write
0
Write Mode
EN
1
R
SSR
0
Input Signals
WE
Data on DI and DIP inputs is written into
specified RAM location and simultaneously
appears on DO and DOP outputs.
Data from specified RAM location appears on
DO and DOP outputs.
Data on DI and DIP inputs is written into
specified location.
Data on DO and DOP outputs remains
unchanged.
Data on DI and DIP inputs is written into
specified location.
1
CLK
↑
Effect on Same Port
ADDR
Write RAM, Simultaneous Read Operation
addr
pdata
DIP
www.xilinx.com
Data
DI
RAM(data)
portions of
which WE is Low.
Data also can be accessed on the DO outputs when assert-
ing the WE input based on the value of the
attribute as described in
No Chg
pdata
DOP
Output Signals
Invalidates data on DO and DOP outputs.
Data from specified RAM location appears on
DO and DOP outputs.
Invalidates data on DO and DOP outputs.
WRITE_MODE = WRITE_FIRST
WRITE_MODE = NO_CHANGE
WRITE_MODE = READ_FIRST
Figure
RAM(data)
(dual-port only with same address)
No Chg
data
DO
33,
Effect on Opposite Port
Table
Figure
RAM(addr)
RAM(addr)
RAM(addr)
26.
← pdata
← pdata
← pdata
34, and
Parity
Functional Description
RAM Data
Figure 35
WRITE_MODE
RAM(addr)
RAM(addr)
RAM(addr)
← pdata
← pdata
← data
Data
during
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