PDTA115EE,115 NXP Semiconductors, PDTA115EE,115 Datasheet - Page 5

• Manufacturer Part Number: PDTA115EE,115
• Description: TRANS PNP W/RES 50V SOT-416
• Manufacturer: NXP Semiconductors

Specifications of PDTA115EE,115

• Package / Case: SC-75, SOT-416
• Transistor Type: PNP - Pre-Biased
• Current - Collector (ic) (max): 20mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 100K
• Resistor - Emitter Base (r2) (ohms): 100K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 80 @ 5mA, 5V
• Vce Saturation (max) @ Ib, Ic: 150mV @ 250µA, 5mA
• Current - Collector Cutoff (max): 1µA
• Power - Max: 150mW
• Mounting Type: Surface Mount
• Configuration: Single
• Transistor Polarity: PNP
• Typical Input Resistor: 100 KOhm
• Typical Resistor Ratio: 1
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 50 V
• Peak Dc Collector Current: 20 mA
• Power Dissipation: 150 mW
• Maximum Operating Temperature: + 150 C
• Emitter- Base Voltage Vebo: - 10 V
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 568-2106-2; 934058177115; PDTA115EE T/R

NXP Semiconductors
THERMAL CHARACTERISTICS
Notes
1. Refer to standard mounting conditions.
2. Reflow soldering is the only recommended soldering method.
3. Refer to SOT883 standard mounting conditions; FR4 with 60 μm copper strip line.
CHARACTERISTICS
T
2004 Jul 30
R
I
I
I
h
V
V
V
R1
C
SYMBOL
R2
------- -
R1
amb
CBO
CEO
EBO
SYMBOL
FE
CEsat
i(off)
i(on)
PNP resistor-equipped transistors;
R1 = 100 kΩ, R2 = 100 kΩ
th(j-a)
c
= 25 °C unless otherwise specified.
thermal resistance from junction to ambient
collector-base cut-off current
collector-emitter cut-off current
emitter-base cut-off current
DC current gain
collector-emitter saturation voltage
input-off voltage
input-on voltage
input resistor
resistor ratio
collector capacitance
SOT23
SOT54
SOT323
SOT346
SOT416
SOT490
SOT883
PARAMETER
PARAMETER
V
V
V
T
V
V
I
I
I
I
f = 1 MHz
C
C
C
E
j
CB
CE
CE
EB
CE
= 150 °C
= i
= −5 mA; I
= −100 μA; V
= −1 mA; V
= −5 V; I
= −50 V; I
= −30 V; I
= −30 V; I
= −5 V; I
e
= 0 A; V
5
T
note 1
note 1
note 1
note 1
note 1
notes 1 and 2
notes 2 and 3
CONDITIONS
amb
C
B
C
CONDITIONS
CE
≤ 25 °C
E
B
B
= −0.25 mA
CB
= 0 A
= −5 mA
CE
= 0 A
= 0 A
= 0 A;
= −0.3 V
= −10 V;
= −5 V
−
−
−
−
80
−
−
−3
70
0.8
−
MIN.
VALUE
PDTA115E series
500
250
625
500
833
500
500
−
−
−
−
−
−
−1.2
−1.6
100
1
−
TYP.
Product data sheet
−100
−1
−50
−50
−
−150
−0.5
−
130
1.2
3
MAX.
UNIT
K/W
K/W
K/W
K/W
K/W
K/W
K/W
nA
μA
μA
μA
mV
V
V
kΩ
pF
UNIT