PDTA115EE,115 NXP Semiconductors, PDTA115EE,115 Datasheet - Page 3

• Manufacturer Part Number: PDTA115EE,115
• Description: TRANS PNP W/RES 50V SOT-416
• Manufacturer: NXP Semiconductors

Specifications of PDTA115EE,115

• Package / Case: SC-75, SOT-416
• Transistor Type: PNP - Pre-Biased
• Current - Collector (ic) (max): 20mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 100K
• Resistor - Emitter Base (r2) (ohms): 100K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 80 @ 5mA, 5V
• Vce Saturation (max) @ Ib, Ic: 150mV @ 250µA, 5mA
• Current - Collector Cutoff (max): 1µA
• Power - Max: 150mW
• Mounting Type: Surface Mount
• Configuration: Single
• Transistor Polarity: PNP
• Typical Input Resistor: 100 KOhm
• Typical Resistor Ratio: 1
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 50 V
• Peak Dc Collector Current: 20 mA
• Power Dissipation: 150 mW
• Maximum Operating Temperature: + 150 C
• Emitter- Base Voltage Vebo: - 10 V
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 568-2106-2; 934058177115; PDTA115EE T/R

NXP Semiconductors
SIMPLIFIED OUTLINE, SYMBOL AND PINNING
2004 Jul 30
PDTA115ES
PDTA115EE
PDTA115EEF
PDTA115EK
PDTA115ET
PDTA115EU
PDTA115EM
TYPE NUMBER
PNP resistor-equipped transistors;
R1 = 100 kΩ, R2 = 100 kΩ
handbook, halfpage
handbook, halfpage
handbook, halfpage
2
1
Bottom view
Top view
1
1
2
3
SIMPLIFIED OUTLINE AND SYMBOL
3
2
3
MAM338
1
3
1
1
R1
R1
R2
R2
R1
MDB267
MDB271
R2
3
2
3
2
2
3
PDTA115E series
PIN
1
2
3
1
2
3
1
2
3
Product data sheet
PINNING
base
collector
emitter
base
emitter
collector
base
emitter
collector
DESCRIPTION