BUT12AI,127 NXP Semiconductors, BUT12AI,127 Datasheet - Page 6

• Manufacturer Part Number: BUT12AI,127
• Description: TRANS NPN 1000V 8A TO-220AB
• Manufacturer: NXP Semiconductors

Specifications of BUT12AI,127

• Transistor Type: NPN
• Current - Collector (ic) (max): 8A
• Voltage - Collector Emitter Breakdown (max): 450V
• Vce Saturation (max) @ Ib, Ic: 1.5V @ 860mA, 5A
• Current - Collector Cutoff (max): 1mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 14 @ 1A, 5V
• Power - Max: 110W
• Mounting Type: Through Hole
• Package / Case: TO-220AB-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Frequency - Transition: -
• Other names: 934050220127; BUT12AI; BUT12AI

Philips Semiconductors
MECHANICAL DATA
Notes
1. Refer to mounting instructions for TO220 envelopes.
2. Epoxy meets UL94 V0 at 1/8".
June 1997
Silicon Diffused Power Transistor
Dimensions in mm
Net Mass: 2 g
not tinned
3,0 max
max
(2x)
1,3
Fig.17. TO220AB; pin 2 connected to mounting base.
1 2 3
2,54 2,54
10,3
max
3,7
6
3,0
2,8
0,9 max (3x)
13,5
min
1,3
4,5
max
Product specification
min
5,9
BUT12AI
2,4
0,6
Rev 1.000
15,8
max