BUT12AI,127 NXP Semiconductors, BUT12AI,127 Datasheet - Page 5

• Manufacturer Part Number: BUT12AI,127
• Description: TRANS NPN 1000V 8A TO-220AB
• Manufacturer: NXP Semiconductors

Specifications of BUT12AI,127

• Transistor Type: NPN
• Current - Collector (ic) (max): 8A
• Voltage - Collector Emitter Breakdown (max): 450V
• Vce Saturation (max) @ Ib, Ic: 1.5V @ 860mA, 5A
• Current - Collector Cutoff (max): 1mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 14 @ 1A, 5V
• Power - Max: 110W
• Mounting Type: Through Hole
• Package / Case: TO-220AB-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Frequency - Transition: -
• Other names: 934050220127; BUT12AI; BUT12AI

Philips Semiconductors
June 1997
Silicon Diffused Power Transistor
Fig.13. Forward bias safe operating area. T
Fig.14. Reverse bias safe operating area. T
8
7
6
5
4
3
2
1
0
I
II
NB:
0.01
100
0.1
10
0
IC / A
1
1
IC / A
ICmax
ICMmax
Region of permissible DC operation.
Extension for repetitive pulse operation.
Mounted with heatsink compound and
30
envelope.
200
5 newton force on the centre of the
10
400
I
VCE / V
600
100
VCE / V
II
800
1000
mb
1000
DC
j
= 25˚C
T
j max
5
100
1E+01
1E+00
1E-02
1E-01
10
1
0.01
Fig.15. Typical DC current gain. hFE = f(IC)
h
FE
Zth / (K/W)
Fig.16. Transient thermal impedance.
0.05
0.02
D=0
0.5
0.2
0.1
Z
th j-mb
1E-05
= f(t); parameter D = t
parameter VCE
Tj = 25 C
Tj = 125 C
0.1
1V
IC / A
1E-03
t / s
P
D
Product specification
t p
1
T
1E-01
p
/T
D =
BUT12AI
5V
BUX100
T
Rev 1.000
t
p
t
1E+01
10