BUT12AI,127 NXP Semiconductors, BUT12AI,127 Datasheet - Page 3

• Manufacturer Part Number: BUT12AI,127
• Description: TRANS NPN 1000V 8A TO-220AB
• Manufacturer: NXP Semiconductors

Specifications of BUT12AI,127

• Transistor Type: NPN
• Current - Collector (ic) (max): 8A
• Voltage - Collector Emitter Breakdown (max): 450V
• Vce Saturation (max) @ Ib, Ic: 1.5V @ 860mA, 5A
• Current - Collector Cutoff (max): 1mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 14 @ 1A, 5V
• Power - Max: 110W
• Mounting Type: Through Hole
• Package / Case: TO-220AB-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Frequency - Transition: -
• Other names: 934050220127; BUT12AI; BUT12AI

Philips Semiconductors
June 1997
Silicon Diffused Power Transistor
Fig.4. Switching times waveforms with resistive load.
R
Fig.3. Test circuit resistive load. VIM = -6 to +8 V
B
and R
VIM
IB
0
IC
-VBB
IBon
V
CC
L
Fig.5. Test circuit inductive load.
V
= 250 V; tp = 20 s; = tp / T = 0.01.
T
calculated from I
CC
tp
= 300 V; -V
10 %
tr 30ns
ton
90 %
LB
R
-IBoff
B
BE
Con
= 5 V;L
and I
LC
toff
ts
B
R
VCC
Bon
T.U.T.
L
= 1 uH
VCC
IBon
requirements.
ICon
tf
T.U.T.
90 %
10 %
3
Fig.6. Switching times waveforms with inductive load.
Fig.7. Test circuit RBSOA. V
IB
IBend
120
110
100
IC
-VBB
90
80
70
60
50
40
30
20
10
0
Fig.8. Normalised power dissipation.
0
L
PD%
C
PD% = 100 PD/PD
= 200 H; V
20
LB
40
CL
ts
toff
60
IBon
Tmb / C
LC
850 V; L
VCC
80
Normalised Power Derating
T.U.T.
CC
25˚C
= 150 V; -V
Product specification
100
= f (T
tf
B
90 %
ICon
= 1 H
-IBoff
10 %
120
mb
BUT12AI
)
Rev 1.000
BB
140
CFB
VCL
t
t
= 5 V