BUT12AI,127 NXP Semiconductors, BUT12AI,127 Datasheet

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BUT12AI,127

Manufacturer Part Number
BUT12AI,127
Description
TRANS NPN 1000V 8A TO-220AB
Manufacturer
NXP Semiconductors
Datasheet
1.BUT12AI127.pdf (7 pages)

Specifications of BUT12AI,127

Transistor Type
NPN
Current - Collector (ic) (max)
8A
Voltage - Collector Emitter Breakdown (max)
450V
Vce Saturation (max) @ Ib, Ic
1.5V @ 860mA, 5A
Current - Collector Cutoff (max)
1mA
Dc Current Gain (hfe) (min) @ Ic, Vce
14 @ 1A, 5V
Power - Max
110W
Mounting Type
Through Hole
Package / Case
TO-220AB-3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Frequency - Transition
-
Other names
934050220127
BUT12AI
BUT12AI
Philips Semiconductors
GENERAL DESCRIPTION
Improved high-voltage, high-speed glass-passivated npn power transistor in a TO220AB envelope specially suited
for use in overhead/high frequency lighting ballast applications and converters, inverters, switching regulators,
motor control systems, etc.
QUICK REFERENCE DATA
PINNING - TO220AB
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
THERMAL RESISTANCES
June 1997
Silicon Diffused Power Transistor
SYMBOL
V
V
I
I
P
V
I
t
SYMBOL
V
V
I
I
I
I
P
T
T
SYMBOL
R
R
C
CM
Csat
f
C
CM
B
BM
PIN
stg
j
CESM
CEO
tot
CEsat
tab
CESM
CEO
tot
th j-hs
th j-a
1
2
3
base
collector
emitter
collector
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current
Inductive fall time
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Total power dissipation
Storage temperature
Junction temperature
PARAMETER
Junction to heatsink
Junction to ambient
DESCRIPTION
PIN CONFIGURATION
tab
CONDITIONS
V
T
I
I
CONDITIONS
V
T
CONDITIONS
with heatsink compound
in free air
C
Con
1 2 3
BE
hs
BE
hs
1
= 5 A; I
= 5 A; I
= 0 V
= 0 V
25 ˚C
25 ˚C
B
= 0.86A
Bon
= 1.0 A;T
j
SYMBOL
100˚C
b
TYP.
TYP.
MIN.
Product specification
-65
5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
MAX.
MAX.
MAX.
1000
e
1000
c
1.15
450
110
300
450
110
150
150
1.5
20
20
60
BUT12AI
8
8
4
6
-
Rev 1.000
UNIT
UNIT
UNIT
K/W
K/W
ns
W
W
˚C
˚C
V
V
A
A
V
A
V
V
A
A
A
A

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BUT12AI,127 Summary of contents

Page 1

Philips Semiconductors Silicon Diffused Power Transistor GENERAL DESCRIPTION Improved high-voltage, high-speed glass-passivated npn power transistor in a TO220AB envelope specially suited for use in overhead/high frequency lighting ballast applications and converters, inverters, switching regulators, motor control systems, etc. QUICK REFERENCE ...

Page 2

Philips Semiconductors Silicon Diffused Power Transistor STATIC CHARACTERISTICS ˚C unless otherwise specified hs SYMBOL PARAMETER I Collector cut-off current CES I CES I Emitter cut-off current EBO V Collector-emitter sustaining voltage CEOsust V Collector-emitter saturation voltages I ...

Page 3

Philips Semiconductors Silicon Diffused Power Transistor VIM Fig.3. Test circuit resistive load. VIM = - 250 0.01 and ...

Page 4

Philips Semiconductors Silicon Diffused Power Transistor VBEsat / 125 C 1 0.9 0.8 0.7 0.6 0.5 0.4 0 Fig.9. Typical base-emitter saturation voltage f(I ); ...

Page 5

Philips Semiconductors Silicon Diffused Power Transistor 100 ICMmax 10 ICmax 1 I 0.1 0. 100 Fig.13. Forward bias safe operating area Region of permissible DC operation. II Extension for repetitive pulse operation. NB: ...

Page 6

Philips Semiconductors Silicon Diffused Power Transistor MECHANICAL DATA Dimensions in mm Net Mass 3,0 max not tinned max (2x) Notes 1. Refer to mounting instructions for TO220 envelopes. 2. Epoxy meets UL94 V0 at 1/8". June 1997 10,3 ...

Page 7

Philips Semiconductors Silicon Diffused Power Transistor DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This ...

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