BC182LB_J35Z Fairchild Semiconductor, BC182LB_J35Z Datasheet
BC182LB_J35Z
Specifications of BC182LB_J35Z
Related parts for BC182LB_J35Z
BC182LB_J35Z Summary of contents
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... Base-Emitter Saturation Voltage BE V (on) Base-Emitter On Voltage BE Dynamic Characteristics f Current Gain Bandwidth Product T C Output Capacitance ob h Small Signal Current Gain fe NF Noise Figure ©2002 Fairchild Semiconductor Corporation BC182LB T =25 C unless otherwise noted C Parameter - Continuous T =25 C unless otherwise noted C Test Condition I = 2mA ...
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... Thermal Characteristics Symbol P Total Device Dissipation @T D Derate above Thermal Resistance, Junction to Ambient JA R Thermal Resistance, Junction to Case JC ©2002 Fairchild Semiconductor Corporation T =25 C unless otherwise noted A Parameter = Max. Units 350 mW 2.8 mW/ C 357 mW/ C 125 C/W Rev. A1, August 2002 ...
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... Package Dimensions 0.46 0.10 1.27TYP [1.27 ] 0.20 ©2002 Fairchild Semiconductor Corporation TO-92 +0.25 4.58 –0.15 1.27TYP [1.27 ] 0.20 3.60 0.20 (R2.29) +0.10 0.38 –0.05 Dimensions in Millimeters Rev. A1, August 2002 ...
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... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ ® Bottomless™ FAST CoolFET™ FASTr™ CROSSVOLT™ ...