BUT12ATU Fairchild Semiconductor, BUT12ATU Datasheet
BUT12ATU
Manufacturer Part Number
BUT12ATU
Description
TRANSISTOR NPN 450V 8A TO-220
Manufacturer
Fairchild Semiconductor
Datasheet
1.BUT12A.pdf
(3 pages)
Specifications of BUT12ATU
Transistor Type
NPN
Current - Collector (ic) (max)
8A
Voltage - Collector Emitter Breakdown (max)
450V
Vce Saturation (max) @ Ib, Ic
1.5V @ 1.2A, 6A
Current - Collector Cutoff (max)
1mA
Power - Max
100W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Frequency - Transition
-
Dc Current Gain (hfe) (min) @ Ic, Vce
-
©2001 Fairchild Semiconductor Corporation
High Voltage Power Switching Applications
NPN Silicon Transistor
Absolute Maximum Ratings
Electrical Characteristics
* Pulsed Test: PW = 300 s, duty cycle = 1.5%
V
t
V
V
I
I
I
P
T
T
V
I
I
V
t
t
F
C
CP
B
CES
EBO
ON
STG
J
STG
BE
CBO
CEO
C
CEO
CE
Symbol
Symbol
(sat)
(sat)
(sus)
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current (DC)
*Collector Current (Pulse)
Base Current
Collector Dissipation (T
Junction Temperature
Storage Temperature
* Collector-Emitter Sustaining Voltage
* Collector-Emitter Saturation Voltage
* Base-Emitter Saturation Voltage
Collector Cut-off Current
Emitter Cut-off Current
Turn On Time
Storage Time
Fall Time
Parameter
C
T
=25 C)
: BUT12
: BUT12A
: BUT12
: BUT12A
C
=25 C unless otherwise noted
Parameter
T
C
=25 C unless otherwise noted
BUT12/12A
I
V
V
I
I
V
I
R
C
C
C
B1
CE
BE
CC
L
= 100mA, L = 25mH
= 6A, I
= 6A, I
= 41.6
= - I
= 9V, I
= V
= 250V, I
Test Condition
B2
CES
B
B
= 1.2A
C
= 1.2A
= 1.2A
, V
= 0
C
BE
= 6A
= 0
1.Base
1
Min.
400
- 65 ~ 175
2.Collector
Value
1000
850
400
450
100
150
20
4
8
Typ.
TO-220
Max.
3.Emitter
1.5
1.5
0.8
10
1
1
4
Rev. A1, August 2001
Units
W
V
V
V
V
A
A
Units
A
C
C
mA
mA
V
V
V
s
s
s
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BUT12ATU Summary of contents
Page 1
... Collector-Emitter Saturation Voltage CE V (sat) * Base-Emitter Saturation Voltage BE t Turn On Time ON t Storage Time STG t Fall Time F * Pulsed Test 300 s, duty cycle = 1.5% ©2001 Fairchild Semiconductor Corporation BUT12/12A T =25 C unless otherwise noted C Parameter : BUT12 : BUT12A : BUT12 : BUT12A = =25 C unless otherwise noted C Test Condition ...
Page 2
... Package Demensions 1.27 2.54TYP [2.54 ©2001 Fairchild Semiconductor Corporation TO-220 9.90 0.20 (8.70) ø3.60 0.10 1.52 0.10 0.10 0.80 0.10 2.54TYP ] [2.54 ] 0.20 0.20 10.00 0.20 4.50 0.20 +0.10 1.30 –0.05 +0.10 0.50 2.40 0.20 –0.05 Dimensions in Millimeters Rev. A1, August 2001 ...
Page 3
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. A CEx™ FAST FASTr™ Bottomless™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ ...