2N3417_D27Z Fairchild Semiconductor, 2N3417_D27Z Datasheet - Page 2

• Manufacturer Part Number: 2N3417_D27Z
• Description: TRANSISTOR NPN 50V 500MA TO-92
• Manufacturer: Fairchild Semiconductor

Specifications of 2N3417_D27Z

• Transistor Type: NPN
• Current - Collector (ic) (max): 500mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 3mA, 50mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 180 @ 2mA, 4.5V
• Power - Max: 625mW
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Frequency - Transition: -

V
V
V
I
I
ON CHARACTERISTICS*
h
OFF CHARACTERISTICS
h
V
V
SMALL SIGNAL CHARACTERISTICS
Symbol
CBO
EBO
fe
FE
(BR)CEO
(BR)CBO
(BR)EBO
CE(
BE(
*
Electrical Characteristics
Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%
sat
sat
)
)
Collector-Emitter Breakdown
Voltage*
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Cutoff Current
Emitter-Cutoff Current
Small-Signal Current Gain
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Parameter
TA = 25°C unless otherwise noted
I
f = 1.0 kHz
I
I
I
V
V
V
V
I
I
C
C
E
C
C
C
CB
CB
EB
CE
= 10 A, I
= 2.0 mA, V
= 10 mA, I
= 10 A, I
= 50 mA, I
= 50 mA, I
= 25 V, I
= 18 V, I
= 5.0 V, I
= 4.5 V, I
Test Conditions
E
C
B
E
E
B
B
C
C
= 0
= 0
CE
= 0
= 0
= 0, T
= 3.0 mA
= 3.0 mA
= 0
= 2.0 mA
NPN General Purpose Amplifier
= 4.5 V,
A
= 100 C
2N3416
2N3417
2N3416
2N3417
Min
180
180
5.0
0.6
75
50
50
75
Max
100
100
225
540
0.3
1.3
15
(continued)
Units
nA
nA
V
V
V
V
V
A