BFS17T/R NXP Semiconductors, BFS17T/R Datasheet - Page 3

• Manufacturer Part Number: BFS17T/R
• Description: Trans GP BJT NPN 15V 0.025A 3-Pin TO-236AB T/R
• Manufacturer: NXP Semiconductors
• Type: NPNr

Specifications of BFS17T/R

• Package: 3TO-236AB
• Supplier Package: TO-236AB
• Pin Count: 3
• Minimum Dc Current Gain: 25@2mA@1V|25@25mA@1V
• Maximum Operating Frequency: 1600(Typ) MHz
• Maximum Dc Collector Current: 0.025 A
• Maximum Collector Base Voltage: 25 V
• Maximum Collector Emitter Voltage: 15 V
• Maximum Emitter Base Voltage: 2.5 V

NXP Semiconductors
THERMAL CHARACTERISTICS
Note
1. T
CHARACTERISTICS
T
September 1995
R
I
h
f
C
C
C
F
SYMBOL
SYMBOL
j
CBO
T
FE
= 25 C unless otherwise specified.
NPN 1 GHz wideband transistor
th j-s
c
e
re
s
is the temperature at the soldering point of the collector pin.
thermal resistance from junction to soldering point
collector cut-off current
DC current gain
transition frequency
collector capacitance
emitter capacitance
feedback capacitance
noise figure
PARAMETER
PARAMETER
I
I
I
I
I
I
I
I
I
f = 500 MHz
E
C
C
C
C
E
C
C
C
= 0; V
= i
= 2 mA; V
= 25 mA; V
= 2 mA; V
= 25 mA; V
= i
= 1 mA; V
= 2 mA; V
e
c
= 0; V
= 0; V
CB
= 10 V
CONDITIONS
3
CB
EB
CE
CE
CE
CE
CE
CE
= 0.5 V; f = 1 MHz
= 10 V; f = 1 MHz
= 1 V
= 5 V; f = 500 MHz
= 5 V; f = 1 MHz
= 5 V; R
= 1 V
= 5 V; f = 500 MHz
up to T
S
= 50 ;
CONDITIONS
s
= 70 C; note 1

25
25






MIN.

90
90
1
1.6
0.8

0.65
4.5
TYP.
VALUE
260
Product specification
10




1.5
2


MAX.
BFS17
UNIT
K/W
nA
GHz
GHz
pF
pF
pF
dB
UNIT