BFS17T/R NXP Semiconductors, BFS17T/R Datasheet - Page 2

• Manufacturer Part Number: BFS17T/R
• Description: Trans GP BJT NPN 15V 0.025A 3-Pin TO-236AB T/R
• Manufacturer: NXP Semiconductors
• Type: NPNr

Specifications of BFS17T/R

• Package: 3TO-236AB
• Supplier Package: TO-236AB
• Pin Count: 3
• Minimum Dc Current Gain: 25@2mA@1V|25@25mA@1V
• Maximum Operating Frequency: 1600(Typ) MHz
• Maximum Dc Collector Current: 0.025 A
• Maximum Collector Base Voltage: 25 V
• Maximum Collector Emitter Voltage: 15 V
• Maximum Emitter Base Voltage: 2.5 V

NXP Semiconductors
DESCRIPTION
NPN transistor in a plastic SOT23 package.
APPLICATIONS
 A wide range of RF applications such as:
PINNING
QUICK REFERENCED DATA
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note to the Quick reference data and the Limiting values
1. T
September 1995
V
V
I
P
f
F
V
V
V
I
I
P
T
T
SYMBOL
SYMBOL
C
T
C
CM
– Mixers and oscillators in TV tuners
– RF communications equipment.
stg
j
CBO
CEO
tot
CBO
CEO
EBO
tot
NPN 1 GHz wideband transistor
PIN
1
2
3
s
is the temperature at the soldering point of the collector pin.
base
emitter
collector
collector-base voltage
collector-emitter voltage
DC collector current
total power dissipation
transition frequency
noise figure
collector-base voltage
collector-emitter voltage
emitter-base voltage
DC collector current
peak collector current
total power dissipation
storage temperature
junction temperature
PARAMETER
PARAMETER
DESCRIPTION
open emitter
open base
up to T
I
I
T
C
C
j
= 25 mA; V
= 2 mA; V
= 25 C
s
= 70 C; note 1
open emitter
open base
open collector
up to T
CE
CE
= 5 V; R
= 5 V; f = 500 MHz; T
2
CONDITIONS
s
handbook, halfpage
= 70 C; note 1
Marking code: E1p.
CONDITIONS
S
= 50 ; f = 500 MHz;
j
= 25 C
Top view
1
Fig.1 SOT23.
3




1
4.5






65

MSB003
TYP.
MIN.
Product specification
2
25
15
25
300


25
15
2.5
25
50
300
+150
150
MAX.
MAX.
BFS17
V
V
mA
mW
GHz
dB
V
V
V
mA
mA
mW
C
C
UNIT
UNIT