BUT11A Fairchild Semiconductor, BUT11A Datasheet
BUT11A
Manufacturer Part Number
BUT11A
Description
TRANSISTOR NPN 450V 5A TO-220
Manufacturer
Fairchild Semiconductor
Datasheet
1.BUT11A.pdf
(4 pages)
Specifications of BUT11A
Transistor Type
NPN
Current - Collector (ic) (max)
5A
Voltage - Collector Emitter Breakdown (max)
450V
Vce Saturation (max) @ Ib, Ic
1.5V @ 500mA, 2.5A
Current - Collector Cutoff (max)
1mA
Power - Max
100W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Transistor Polarity
NPN
Mounting Style
Through Hole
Collector- Emitter Voltage Vceo Max
450 V
Emitter- Base Voltage Vebo
9 V
Maximum Dc Collector Current
5 A
Power Dissipation
100 W
Maximum Operating Temperature
+ 150 C
Continuous Collector Current
5 A
Number Of Elements
1
Collector-emitter Voltage
450V
Collector-base Voltage
1kV
Emitter-base Voltage
9V
Collector Current (dc) (max)
5A
Operating Temp Range
-65C to 150C
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
3 +Tab
Package Type
TO-220AB
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Frequency - Transition
-
Dc Current Gain (hfe) (min) @ Ic, Vce
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
BUT11A
Manufacturer:
NXP
Quantity:
11 550
Part Number:
BUT11A
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Company:
Part Number:
BUT11AF
Manufacturer:
NXPLIPS
Quantity:
863
Company:
Part Number:
BUT11AI
Manufacturer:
NXP
Quantity:
11 550
©2001 Fairchild Semiconductor Corporation
High Voltage Power Switching Applications
NPN Silicon Transistor
Absolute Maximum Ratings
Electrical Characteristics
* Pulsed: pulsed duration = 300 s, duty cycle = 1.5%
Thermal Characteristics
R
V
t
V
V
V
I
I
I
I
P
T
T
V
I
I
V
t
t
F
C
CP
B
BP
CES
EBO
ON
STG
J
STG
BE
CBO
CEO
EBO
C
CEO
CE
Symbol
Symbol
jC
Symbol
(sat)
(sat)
(sus)
* Collector-Emitter Sustaining Voltage
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
*Collector Current (Pulse)
Base Current (DC)
*Base Current (Pulse)
Collector Dissipation (T
Junction Temperature
Storage Temperature
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Turn On Time
Storage Time
Fall Time
Thermal Resistance, Junction to Case
Parameter
Parameter
T
C
C
T
=25 C unless otherwise noted
=25 C)
: BUT11
: BUT11A
: BUT11
: BUT11A
C
: BUT11
: BUT11A
: BUT11
: BUT11A
: BUT11
: BUT11A
: BUT11
: BUT11A
=25 C unless otherwise noted
Parameter
T
C
=25 C unless otherwise noted
BUT11/11A
I
V
V
I
I
I
I
V
I
R
C
C
C
C
C
B1
CE
BE
CC
L
= 100mA, I
= 3A, I
= 2.5A, I
= 3A, I
= 2.5A, I
= 100
= -I
Test Condition
= 9V, I
= 850V, V
= 250V, I
B2
B
B
= 0.5A
= 0.6A
= 0.6A
C
B
B
= 0
= 0.5A
= 0.5A
B
C
BE
= 0
= 2.5A
= 0
Typ
1.Base
1
Min.
400
450
- 65 ~ 150
2.Collector
Value
Max
1.25
1000
850
400
450
100
150
10
Typ.
9
5
2
4
TO-220
Max.
1.5
1.5
1.3
1.3
0.8
3.Emitter
10
1
1
1
4
Units
Rev. B1, August 2001
C/W
Units
W
Units
V
V
A
A
V
A
A
C
C
mA
mA
mA
V
V
V
V
V
V
s
s
s
Related parts for BUT11A
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
TRANSISTOR NPN 400V 5A TO-220
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
Fairchild Semiconductor [IGBT MODULE]
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
Discrete Semiconductor Modules
Manufacturer:
Fairchild Semiconductor
Part Number:
Description:
Discrete Semiconductor Modules
Manufacturer:
Fairchild Semiconductor
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET™ is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET™ is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET™ is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
BUT11A Summary of contents
Page 1
... C unless otherwise noted C Parameter : BUT11 : BUT11A : BUT11 : BUT11A = =25 C unless otherwise noted C Test Condition : BUT11 I = 100mA BUT11A : BUT11 V = 850V BUT11A BUT11 BUT11A I = 2.5A 0. BUT11 BUT11A I = 2.5A 0. 250V 2. 0. 100 L T =25 C unless otherwise noted C Parameter TO-220 1 1.Base 2 ...
Page 2
... Figure 2. Collector-Emitter Saturation Voltage 200 Figure 4. Reverse Biased Safe OPerating Area 120 100 BUT11A BUT11 100 1000 (sat [A], COLLECTOR CURRENT C BUT11A BUT11 400 600 800 1000 1200 V [V], COLLECTOR-EMITTER VOLTAGE 100 125 150 175 C], CASE TEMPERATURE C Figure 6. Power Derating Rev. B1, August 2001 ...
Page 3
... Package Demensions 1.27 2.54TYP [2.54 ©2001 Fairchild Semiconductor Corporation TO-220 9.90 0.20 (8.70) ø3.60 0.10 1.52 0.10 0.10 0.80 0.10 2.54TYP ] [2.54 ] 0.20 0.20 10.00 0.20 4.50 0.20 +0.10 1.30 –0.05 +0.10 0.50 2.40 0.20 –0.05 Dimensions in Millimeters Rev. B1, August 2001 ...
Page 4
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. A CEx™ FAST FASTr™ Bottomless™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ ...