BUT11AFTU Fairchild Semiconductor, BUT11AFTU Datasheet
BUT11AFTU
Specifications of BUT11AFTU
Related parts for BUT11AFTU
BUT11AFTU Summary of contents
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... Turn On Time ON t Storage Time STG t Fall Time F * Pulsed: pulsed duration = 300 s, duty cycle = 1.5% Thermal Characteristics Symbol R Thermal Resistance, Junction to Case jC ©2001 Fairchild Semiconductor Corporation BUT11F/11AF T =25 C unless otherwise noted C Parameter : BUT11F : BUT11AF : BUT11F : BUT11AF = =25 C unless otherwise noted C Test Condition ...
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... C Figure 1. DC current Gain 10 V (sat 0.1 0.01 0.01 0.1 I [A], COLLECTOR CURRENT C Figure 3. Base-Emitter Saturation Voltage 10 Ic MAX (Continuous) 1 0.1 0. [V], COLLECTOR-EMITTER VOLTAGE CE Figure 5. Safe Operating Area ©2001 Fairchild Semiconductor Corporation 0.1 0.01 0. Figure 2. Collector-Emitter Saturation Voltage 200 Figure 4. Reverse Biased Safe Operating Area ...
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... Package Demensions MAX1.47 0.80 0.10 0.35 0.10 2.54TYP [2.54 0.20 ©2001 Fairchild Semiconductor Corporation TO-220F 10.16 ø3.18 0.20 0.10 (7.00) (1.00x45 ) #1 0.50 2.54TYP ] [2.54 ] 0.20 9.40 0.20 2.54 0.20 (0.70) +0.10 2.76 –0.05 0.20 Dimensions in Millimeters Rev. A2, August 2001 ...
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... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. A CEx™ FAST FASTr™ Bottomless™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ ...