MJD32CTF Fairchild Semiconductor, MJD32CTF Datasheet
MJD32CTF
Specifications of MJD32CTF
MJD32CTFTR
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MJD32CTF Summary of contents
Page 1
... Emitter Cut-off Current EBO Current Gain FE V (sat) * Collector-Emitter Saturation Voltage CE V (on) * Base-Emitter ON Voltage BE f Current Gain Bandwidth Product T * Pulse Test: PW 300 s, Duty Cycle 2% ©2001 Fairchild Semiconductor Corporation MJD32/32C 1 T =25 C unless otherwise noted C Parameter : MJD32 : MJD32C : MJD32 : MJD32C = = =25 C unless otherwise noted ...
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... V [V], COLLECTOR-BASE VOLTAGE CB Figure 3. Collector Capacitance t STG =-30V (off)=-10V F CC 0.1 -0.01 -0.1 I [A], COLLECTOR CURRENT C Figure 5. Turn Off Time ©2001 Fairchild Semiconductor Corporation - - -0.1 -0.01 -1E-3 -1 -10 Figure 2. Base-Emitter Saturation Voltage 1 0.1 -0.01 -10 -100 - 10.I I (max (max ...
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... Typical Characteristics 100 C], CASE TEMPERATURE C Figure 7. Power Derating ©2001 Fairchild Semiconductor Corporation (Continued) 125 150 175 Rev. A2, June 2001 ...
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... Package Demensions (0.50) MAX0.96 2.30TYP [2.30 0.20] ©2001 Fairchild Semiconductor Corporation D-PAK 6.60 0.20 5.34 0.30 (4.34) (0.50) 0.76 0.10 2.30TYP [2.30 0.20] 6.60 (2XR0.25) 2.30 0.10 0.50 0.10 0.50 0.10 1.02 0.20 2.30 0.20 0.20 (5.34) (5.04) (1.50) 0.76 0.10 Dimensions in Millimeters Rev ...
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... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. A CEx™ FAST FASTr™ Bottomless™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ ...