FJT44TF Fairchild Semiconductor, FJT44TF Datasheet - Page 3

• Manufacturer Part Number: FJT44TF
• Description: TRANSISTOR NPN 400V 300MA SOT223
• Manufacturer: Fairchild Semiconductor

Specifications of FJT44TF

• Transistor Type: NPN
• Current - Collector (ic) (max): 300mA
• Voltage - Collector Emitter Breakdown (max): 400V
• Vce Saturation (max) @ Ib, Ic: 750mV @ 5mA, 50mA
• Current - Collector Cutoff (max): 500nA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 50 @ 10mA, 10V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 400 V
• Emitter- Base Voltage Vebo: 6 V
• Maximum Dc Collector Current: 0.3 A
• Power Dissipation: 2 W
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current: 0.3 A
• Dc Collector/base Gain Hfe Min: 50
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Frequency - Transition: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

FJT44 Rev. B1
© 2009 Fairchild Semiconductor Corporation
Typical Performance Characteristics
160
140
120
100
100
-20
-40
0.1
80
60
40
20
10
1.0
0.8
0.6
0.4
0.2
0.0
0
1
Figure 3. Turn-Off Switching Times
1
1
0.1
T
A
=25
Figure 1. DC current Gain
o
C
V
Figure 5. On Voltage
CE
I
I
(sat)@I
C
C
I
C
10
[mA], COLLECTOR CURRENT
[mA], COLLECTOR CURRENT
[mA], COLLECTOR CURRENT
1
C
/I
B
V
=10
V
BE
BE
(sat) @I
(on) @V
100
10
10
C
CE
/I
B
=10V
=10
1000
100
V
I
T
C
A
CC
/I
V
=25
B
tf
ts
=150V
CE
=10
=10V
o
C
1000
10000
100
3
1000
Figure 6. Collector Saturation Region
0.1
100
10
0.5
0.4
0.3
0.2
0.1
0.0
10
1
Figure 2. Turn-On Switching Times
1
1
0.1
10
I
C
=1mA
C
C
ib
ob
Figure 4. Capacitance
V
CB
I
I
[V], COLLECTOR-BASE VOLTAGE
C
C
[mA], COLLECTOR CURRENT
100
[mA], COLLECTOR CURRENT
1
I
C
=10mA
1000
10
10
I
C
=50mA
tf
td
10000
100
V
I
T
V
C
CC
A
BE
/I
=25
B
(off)=4V
=150V
=10
T
f=1MHz
A
T
www.fairchildsemi.com
o
=25
C
A
=25
o
C
100000
1000
o
C
100