KSB798YTF Fairchild Semiconductor, KSB798YTF Datasheet
KSB798YTF
Manufacturer Part Number
KSB798YTF
Description
TRANSISTOR PNP 25V 1A SOT-89
Manufacturer
Fairchild Semiconductor
Datasheet
1.KSB798YTF.pdf
(5 pages)
Specifications of KSB798YTF
Transistor Type
PNP
Current - Collector (ic) (max)
1A
Voltage - Collector Emitter Breakdown (max)
25V
Vce Saturation (max) @ Ib, Ic
400mV @ 100mA, 1A
Dc Current Gain (hfe) (min) @ Ic, Vce
135 @ 100mA, 1V
Power - Max
2W
Frequency - Transition
110MHz
Mounting Type
Surface Mount
Package / Case
SC-62, SOT-89, TO-243 (3 Leads + Tab)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
KSB798YTF
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
©2005 Fairchild Semiconductor Corporation
KSB798 Rev. B1
KSB798
PNP Epitaxial Silicon Transistor
Audio Frequency Power Amplifier
• Collector Current : I
• Collector Power Dissipation : P
Absolute Maximum Ratings
* PW ≤ 10ms, Duty cycle ≤ 50%
Electrical Characteristics
V
V
V
I
I
P
T
T
BV
BV
BV
I
I
h
h
V
V
V
f
C
C
CP
Symbol
CBO
EBO
T
J
STG
FE1
FE2
CBO
CEO
EBO
C
CE
BE
BE
ob
CBO
CEO
EBO
Symbol
(sat)
(on)
(sat)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain Bandwidth Product
Output Capacitance
1. Base 2. Collector 3. Emitter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse) *
Collector Power Dissipation
Junction Temperature
Storage Temperature
1
C
= -1A
Parameter
C
= 2W
SOT-89
T
a
= 25°C unless otherwise noted
Parameter
T
a
= 25°C unless otherwise noted
I
I
I
V
V
V
I
I
V
V
V
V
C
C
E
C
C
CB
EB
CE
CE
CE
CE
CB
= -100µA, I
= -1mA, I
= -100µA, I
= -1.0A, I
= -1.0A, I
= -5V, I
= -30V, I
= -1V, I
= -1V, I
= -6V, I
= -6V, I
= -6V, I
Test Condition
1
C
B
C
C
B
B
C
C
E
E
= 0
= 0
= -0.1A
= -0.1A
= 0, f = 1MHz
C
= -0.1A
= -1.0A
= -10mA
= -10mA
E
= 0
= 0
= 0
Marking
P Y
7 9
Min.
-0.6
-30
-25
W W
90
50
-5
8
Ratings
-55 ~ 150
-1.0
-1.5
150
-30
-25
2.0
-5
Typ.
Weekly code
Year code
h
110
FE
18
grage
Max.
-0.1
-0.1
400
-0.4
-1.2
-0.7
www.fairchildsemi.com
Units
°C
°C
W
V
V
V
A
A
July 2005
Units
MHz
µA
µA
pF
V
V
V
V
V
V
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KSB798YTF Summary of contents
Page 1
... Collector-Emitter Saturation Voltage CE V (sat) Base-Emitter Saturation Voltage BE V (on) Base-Emitter On Voltage BE f Current Gain Bandwidth Product T C Output Capacitance ob ©2005 Fairchild Semiconductor Corporation KSB798 Rev. B1 Marking SOT- 25°C unless otherwise noted a Parameter T = 25°C unless otherwise noted a Test Condition I = -100µA, I ...
Page 2
Classification FE Classification h FE1 Package Marking and Ordering Information Device Marking Device 798 KSB798 KSB798 Rev 180 135 ~ 270 Package Reel Size SOT-89 13” 200 ~ 400 Tape Width Quantity ...
Page 3
Typical Performance Characteristics Figure 1. Static Characteristic -1.0 -0.9 -0.8 -0 -8mA I = -7mA -6mA B -0.6 -0.5 -0.4 -0.3 -0.2 -0.1 0 [V], COLLECTOR-EMITTER VOLTAGE ...
Page 4
Mechanical Dimensions ±0.10 0.50 1.50 TYP 1.50 TYP KSB798 Rev. B1 SOT-89 ±0.20 4.50 1.65 ±0.10 C0.2 ±0.10 0.40 4 ±0.20 1.50 (0.40) +0.10 0.40 –0.05 Dimensions in Millimeters www.fairchildsemi.com ...
Page 5
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ® ACEx™ FAST ActiveArray™ FASTr™ Bottomless™ FPS™ Build it Now™ FRFET™ CoolFET™ ...