MPSA56_D75Z Fairchild Semiconductor, MPSA56_D75Z Datasheet - Page 3

• Manufacturer Part Number: MPSA56_D75Z
• Description: TRANS GP PNP 80V 500MA TO-92
• Manufacturer: Fairchild Semiconductor

Specifications of MPSA56_D75Z

• Transistor Type: PNP
• Current - Collector (ic) (max): 500mA
• Voltage - Collector Emitter Breakdown (max): 80V
• Vce Saturation (max) @ Ib, Ic: 200mV @ 10mA, 100mA
• Current - Collector Cutoff (max): 100nA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 100mA, 1V
• Power - Max: 625mW
• Frequency - Transition: 50MHz
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Configuration: Single
• Transistor Polarity: PNP
• Mounting Style: Through Hole
• Collector- Emitter Voltage Vceo Max: 80 V
• Emitter- Base Voltage Vebo: - 4 V
• Continuous Collector Current: - 0.5 A
• Maximum Dc Collector Current: 0.5 A
• Power Dissipation: 625 mW
• Maximum Operating Frequency: 50 MHz
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 100
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

MPSA56/MMBTA56/PZTA56 Rev. 1.0.2
Typical Characteristics
-1.2
-0.8
-0.6
-0.4
-0.001
300
250
200
150
100
-0.01
50
-1
-0.001
-0.1
-10
-10
-1
25
Typical Pulsed Current Gain
Voltage vs Collector Current
= 10
- 40 C
Base-Emitter Saturation
vs Ambient Temperature
Collector-Cutoff Current
V
CB
vs Collector Curren
I - COLLECTOR CURRE NT (mA)
C
I
T - AMBIENT TEMPERATURE ( C)
C
= -60V
A
- COLLECTOR CURRENT (A)
50
25 C
-0.01
125 C
25 C
- 40 C
-100
75
125 C
-0.1
100
V
CE
= -1V
-1000
-1
125
3
-1.2
-0.8
-0.6
-0.4
-0.2
100
-0.8
-0.6
-0.4
-0.2
-1
0
0
-0.1
-0.1
-1
Input and Output Capacitance
Base Emitter ON Voltage vs
Voltage vs Collector Current
Collector-Emitter Saturation
V
CE
= 10
= -1V
I - COLLECTOR CURRENT (mA)
I - COLLECTOR CURRE NT (mA)
vs Reverse Voltage
V
C
C
CE
Collect or Current
-1
- COLLECTOR VOLTAGE (V)
- 40 C
-1
25 C
- 40 C
-10
125 C
25 C
-10
125 C
C
f = 1.0 MHz
-100
ib
-100
www.fairchildsemi.com
C
ob
-100
-1000