KSA916YBU Fairchild Semiconductor, KSA916YBU Datasheet
Home Discrete Semiconductor Products Transistors (BJT) - Single KSA916YBU
Manufacturer Part Number
KSA916YBU
Description
TRANSISTOR PNP 120V 800MA TO-92L
Manufacturer
Fairchild Semiconductor
Specifications of KSA916YBU
Transistor Type
PNP
Current - Collector (ic) (max)
800mA
Voltage - Collector Emitter Breakdown (max)
120V
Vce Saturation (max) @ Ib, Ic
1V @ 50mA, 500mA
Dc Current Gain (hfe) (min) @ Ic, Vce
120 @ 100mA, 5V
Power - Max
900mW
Frequency - Transition
120MHz
Mounting Type
Through Hole
Package / Case
TO-92-3 (Long Body), TO-226
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
©2001 Fairchild Semiconductor Corporation
Audio Power Amplifier
• Driver Stage Amplifier
• Complement to KSC2316
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
Electrical Characteristics
h
V
V
V
I
P
T
T
BV
BV
BV
I
h
h
V
f
C
C
CBO
T
FE
Symbol
FE1
FE2
J
STG
CBO
CEO
EBO
C
CE
ob
CBO
CEO
EBO
Symbol
(sat)
Classification
Classification
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
h
FE
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
Parameter
T
a
=25 C unless otherwise noted
T
Parameter
a
=25 C unless otherwise noted
KSA916
I
I
I
V
V
V
I
V
V
C
C
E
C
80 ~ 160
CB
CE
CE
CE
CB
= -1mA I
= -10mA, I
= -1mA, I
= -500mA, I
= -120V, I
= -5V, I
= -5V, I
= -5V, I
= -10V, I
O
Test Condition
E
C
C
C
C
=0
B
=0
= -10mA
= -100mA
= -100mA
E
=0
E
B
=0, f=1MHz
=0
= -50mA
1. Emitter 2. Collector 3. Base
1
Min.
-120
-120
60
80
-5
-55 ~ 150
Ratings
-120
-120
-800
900
150
-5
Typ.
120
120 ~ 240
Y
TO-92L
Max.
-0.1
240
40
-1
Units
mW
Rev. A1, June 2001
mA
V
V
V
C
C
Units
MHz
pF
V
V
V
V
A
Related parts for KSA916YBU
KSA916YBU Summary of contents
... CBO h DC Current Gain FE1 h FE2 V (sat) Collector-Emitter Saturation Voltage CE f Current Gain Bandwidth Product T C Output Capacitance ob h Classification FE Classification h FE ©2001 Fairchild Semiconductor Corporation KSA916 T =25 C unless otherwise noted a Parameter T =25 C unless otherwise noted a Test Condition I = -1mA -10mA -1mA, I ...
... V [V], COLLECTOR-EMITTER VOLTAGE CE Figure 1. Static Characteristic -10 -1 -0.1 V (sat) CE -0.01 -0.1 -1 -10 I [mA], COLLECTOR CURRENT C Figure 3. Collector-Emitter Saturation Voltage -1000 -100 - -10 V [V], COLLECTOR-EMITTER VOLTAGE CE Figure 5. Safe Operating Area ©2001 Fairchild Semiconductor Corporation 1000 I = -10mA -7mA -5mA B 100 I = -4mA -3mA -2mA -1mA ...
... Package Demensions 0.50 0.10 ©2001 Fairchild Semiconductor Corporation TO-92L 4.90 0.20 0.70MAX. 0.80 0.10 1.00MAX. 1.27TYP [1.27 ] 0.20 2.54 TYP 3.90 0.20 0.45 0.10 Dimensions in Millimeters Rev. A1, June 2001 ...
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. A CEx™ FAST FASTr™ Bottomless™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ ...
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