FJX733YTF Fairchild Semiconductor, FJX733YTF Datasheet
FJX733YTF
Manufacturer Part Number
FJX733YTF
Description
TRANSISTOR PNP 50V 150MA SOT-323
Manufacturer
Fairchild Semiconductor
Datasheet
1.FJX733YTF.pdf
(4 pages)
Specifications of FJX733YTF
Transistor Type
PNP
Current - Collector (ic) (max)
150mA
Voltage - Collector Emitter Breakdown (max)
50V
Vce Saturation (max) @ Ib, Ic
300mV @ 10mA, 100mA
Dc Current Gain (hfe) (min) @ Ic, Vce
120 @ 1mA, 6V
Power - Max
200mW
Frequency - Transition
180MHz
Mounting Type
Surface Mount
Package / Case
SC-70-3, SOT-323-3
Configuration
Single
Transistor Polarity
PNP
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
50 V
Emitter- Base Voltage Vebo
- 5 V
Maximum Dc Collector Current
0.15 A
Power Dissipation
0.2 W
Maximum Operating Frequency
180 MHz
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
40
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
©2002 Fairchild Semiconductor Corporation
Low Frequency Amplifier
• Collector-Base Voltage V
• Complement to FJX945
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
Electrical Characteristics
h
V
V
V
I
P
T
T
BV
BV
BV
I
I
h
V
V
f
C
NF
C
CBO
EBO
T
FE
Symbol
FE
J
STG
CBO
CEO
EBO
C
CE
BE
ob
CBO
CEO
EBO
Symbol
(sat)
(on)
Classification
Classification
h
FE
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain Bandwidth Product
Output Capacitance
Noise Figure
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
CBO
Parameter
40 ~ 80
= -60V
R
T
a
=25 C unless otherwise noted
T
Parameter
a
=25 C unless otherwise noted
Marking
70 ~ 140
FJX733
O
S B X
I
I
I
V
V
V
I
V
V
V
f=1MHz
V
f=1MHz, Rs=10K
C
C
E
C
CB
EB
CE
CE
CE
CB
CE
= -100, I
= -10mA. I
= -100mA, I
= -10. I
= -3V, I
= -25V, I
= -6V, I
= -6V, I
= -6V, I
= -10V, I
= -6V, I
Test Condition
C
E
=0
C
C
C
C
C
=0
E
=0
E
B
= -1mA
= -1mA
= -10mA
= -0.3mA
Grade
=0
=0
B
120 ~ 240
= 0
= -10mA
Y
1. Base 2. Emitter 3. Collector
-0.50
Min.
-60
-50
- 5
40
50
200 ~ 400
-55 ~ 150
Ratings
3
G
-150
200
150
-60
-50
-5
-0.18
-0.62
Typ.
180
2.8
6.0
1
-0.80
Max.
-100
-100
-0.3
700
20
SOT-323
350 ~ 700
Rev. B2, August 2002
2
Units
mW
L
mA
V
V
V
C
C
Units
MHz
nA
nA
pF
dB
V
V
V
V
V
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FJX733YTF Summary of contents
Page 1
... DC Current Gain FE V (sat) Collector-Emitter Saturation Voltage CE V (on) Base-Emitter On Voltage BE f Current Gain Bandwidth Product T C Output Capacitance ob NF Noise Figure h Classification FE Classification ©2002 Fairchild Semiconductor Corporation FJX733 T =25 C unless otherwise noted a Parameter T =25 C unless otherwise noted a Test Condition I = -100 -10mA -10 ...
Page 2
... COLLECTOR-EMITTER VOLTAGE CE Figure 1. Static Characteristic - (sat) BE -0.1 V (sat) CE -0.01 -1 -10 I [mA], COLLECTOR CURRENT C Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage -10 V [V], COLLECTOR-BASE VOLTAGE CB Figure 5. Collector Output Capacitance ©2002 Fairchild Semiconductor Corporation 1000 = -350 -300 A B 100 I = -250 -200 -150 -100 - -0.1 -12 -14 -16 ...
Page 3
... Package Dimensions 2.00±0.20 1.25±0.10 1.00±0.10 ©2002 Fairchild Semiconductor Corporation SOT-323 2.10±0.10 0.95±0.15 ±0.10 +0.05 0.05 –0.02 0.275±0.100 3° +0.04 0.135 –0.01 0.10 Min 3° 0.90 1.30±0.10 Dimensions in Millimeters Rev. B2, August 2002 ...
Page 4
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ ® Bottomless™ FAST CoolFET™ FASTr™ CROSSVOLT™ ...