2N4401TA Fairchild Semiconductor, 2N4401TA Datasheet - Page 2

• Manufacturer Part Number: 2N4401TA
• Description: TRANSISTOR NPN 40V 600MA TO-92
• Manufacturer: Fairchild Semiconductor

Specifications of 2N4401TA

• Transistor Type: NPN
• Current - Collector (ic) (max): 600mA
• Voltage - Collector Emitter Breakdown (max): 40V
• Vce Saturation (max) @ Ib, Ic: 750mV @ 50mA, 500mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 150mA, 1V
• Power - Max: 625mW
• Frequency - Transition: 250MHz
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: Through Hole
• Collector- Emitter Voltage Vceo Max: 40 V
• Emitter- Base Voltage Vebo: 6 V
• Continuous Collector Current: 0.6 A
• Maximum Dc Collector Current: 0.6 A
• Power Dissipation: 625 mW
• Maximum Operating Frequency: 250 MHz
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 100
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

V
V
V
I
I
h
V
V
f
C
C
h
h
h
h
t
t
t
t
ON CHARACTERISTICS*
Symbol
OFF CHARACTERISTICS
SMALL SIGNAL CHARACTERISTICS
SWITCHING CHARACTERISTICS
BL
CEX
T
d
r
s
f
FE
ie
re
fe
oe
(BR)CEO
(BR)CBO
(BR)EBO
CE(
BE(
cb
eb
*
Electrical Characteristics
Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%
sat
sat
)
)
Collector-Emitter Breakdown Voltage*
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Base Cutoff Current
Collector Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain - Bandwidth Product
Collector-Base Capacitance
Emitter-Base Capacitance
Input Impedance
Voltage Feedback Ratio
Small-Signal Current Gain
Output Admittance
Delay Time
Rise Time
Storage Time
Fall Time
Parameter
TA = 25°C unless otherwise noted
I
I
I
V
V
I
I
I
I
I
I
I
I
I
I
f = 100 MHz
V
f = 140 kHz
V
f = 140 kHz
I
f = 1.0 kHz
I
f = 1.0 kHz
I
f = 1.0 kHz
I
f = 1.0 kHz
V
I
V
I
C
C
E
C
C
C
C
C
C
C
C
C
C
C
C
C
C
C
B1
CE
CE
CB
BE
CC
CC
= 1.0 mA, I
= 0.1 mA, I
= 0.1 mA, I
= 0.1 mA, V
= 1.0 mA, V
= 10 mA, V
= 150 mA, V
= 500 mA, V
= 150 mA, I
= 500 mA, I
= 150 mA, I
= 500 mA, I
= 20 mA, V
= 1.0 mA, V
= 1.0 mA, V
= 1.0 mA, V
= 1.0 mA, V
= 150 mA, I
= I
= 35 V, V
= 35 V, V
= 5.0 V, I
= 0.5 V, I
= 30 V, V
= 30 V, I
Test Conditions
B2
= 15 mA
C
C
B
E
E
C
EB
EB
CE
CE
EB
B
B
B
B
B1
CE
CE
CE
CE
CE
CE
= 150 mA
= 0
= 0
CE
CE
= 0,
= 0,
= 0
= 15 mA
= 50 mA
= 15 mA
= 50 mA
= 0.4 V
= 0.4 V
= 1.0 V
= 10 V,
= 2 V,
= 15 mA
NPN General Purpose Amplifier
= 1.0 V
= 1.0 V
= 10 V,
= 10 V,
= 10 V,
= 10 V,
= 1.0 V
= 2.0 V
Min
0.75
100
250
6.0
1.0
0.1
1.0
40
60
20
40
80
40
40
Max
0.75
0.95
300
500
225
0.1
0.1
0.4
1.2
6.5
8.0
30
15
30
15
20
30
(continued)
Units
x 10
MHz
mhos
k
pF
pF
ns
ns
ns
ns
V
V
V
V
V
V
V
A
A
-4
3